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26NM60N データシート

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  2016  
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Description
These devices are N-channel Power MOSFETs developed using the second generation of MDmesh™ technology. This revolutionary Power MOSFET applies a new vertical structure to the company’s strip layout to yield a device with one of the world’s lowest on-resistance and gate charge, making it suitable for the most demanding high-efficiency converters.

Features
■ 100% avalanche tested
■ Low input capacitance and gate charge
■ Low gate input resistance

Application
■ Switching applications

 

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コンポーネント説明
PDF
メーカー
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