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2N2222A データシート

部品番号コンポーネント説明メーカー
2N2222A Silicon NPN Transistor Small Signal General Purpose Amplifier & Switch NTE-Electronic
NTE Electronics NTE-Electronic
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Absolute Maximum Ratings: (TA = +25C unless otherwise specified)
Collector−Emitter Voltage, VCEO . . . . . . . . . . .  . . . . . . . . . . . . . . . 50V
Collector−Base Voltage, VCBO . . . . . . . . . . . . .. . . . . . . . . . . . . . . 75V
Emitter−Base Voltage, VEBO . . . . . . . . . . . . . .. . . . . . . . . . . . . . . . . 6V
Continuous Collector Current, IC . . . . . . . . . . .. . . . . . . . . . . . 800mA
Total Device Dissipation, PD                         
   TA = +25℃  . . . . . . . . . . . . . . . . . .  . . . . . . . . . . . . . . . .500mW
   TC = +25℃ . . . . . . . . . . . . . . . . . . . . .  . . . . . . . . . . . . . . . . . 1W
Operating Temperature Range, TJ . . . . . . . . . . .  . . . −65 to +200℃
Storage Temperature Range, Tstg . . . . . . . . . . .  . . . −65 to +200℃
Thermal Resistance, Junction−to−Ambient, RthJA . . . .. . . 325℃/W
Thermal Resistance, Junction−to−Case, RthJC . . . . .  . . . 150℃/W

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