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AP9997GH-HF データシート - VBSEMI

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コンポーネント説明
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AP9997GH-HF
VBSEMI
VBsemi Electronics Co.,Ltd VBSEMI
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AP9997GH-HF image

FEATURES
• TrenchFET® Power MOSFET
• 175 °C Junction Temperature
• PWM Optimized
• 100 % Rg Tested
• Compliant to RoHS Directive 2002/95/EC

APPLICATIONS
• Primary Side Switch

 

部品番号
コンポーネント説明
PDF
メーカー
N-Channel 100-V (D-S) MOSFET ( Rev : 2008 )
Vishay Semiconductors
N-Channel 100-V (D-S) MOSFET
Unspecified
N-Channel 100-V (D-S) MOSFET
VBsemi Electronics Co.,Ltd
N-Channel 100-V (D-S) MOSFET
VBsemi Electronics Co.,Ltd
N-Channel 100-V (D-S) MOSFET
Vishay Semiconductors
N-Channel 100-V (D-S) MOSFET ( Rev : 2003 )
Vishay Semiconductors
N-Channel 100-V (D-S) MOSFET
Analog Power
N-Channel 100-V (D-S) MOSFET
VBsemi Electronics Co.,Ltd
N-Channel 100-V (D-S) MOSFET
VBsemi Electronics Co.,Ltd
N-Channel 100-V (D-S) MOSFET
VBsemi Electronics Co.,Ltd

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