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APT10025JVR データシート

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APT10025JVR
APT
Advanced Power Technology  APT
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Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout.

• Faster Switching
• Lower Leakage
• 100% Avalanche Tested
• Popular SOT-227 Package

 

部品番号
コンポーネント説明
PDF
メーカー
SILICON N & P CHNAAEL MOS TYPE POWER MOS FET MODULE
Toshiba
MOS FIELD EFFECT TRANSISTOR / SWITCHING N-CHANNEL POWER MOS FET
Renesas Electronics
MOS FIELD EFFECT TRANSISTOR / SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE
NEC => Renesas Technology
MOS FIELD EFFECT TRANSISTOR / SWITCHING N-CHANNEL POWER MOS FET
NEC => Renesas Technology
TOSHIBA Field Effect Transistor Silicon N, P Channel MOS Type (P Channel U−MOS IV/N Channel U-MOS III)
Toshiba
SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE(MOS FIELD EFFECT TRANSISTOR)
NEC => Renesas Technology
TRANSISTOR SILICON N CHANNEL MOS TYPE(π-MOS)
Unspecified
MOSFETs Silicon N-Channel MOS (U-MOS VII-H)
Toshiba
MOSFETs Silicon N-channel MOS (U-MOS-H)
Toshiba
MOSFETs Silicon N-channel MOS (U-MOS IV)
Toshiba

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