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BDX33CG データシート

部品番号コンポーネント説明メーカー
BDX33CG Darlington Complementary Silicon Power Transistors ON-Semiconductor
ON Semiconductor ON-Semiconductor
Other PDF  2007  
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BDX33B image

These devices are designed for general purpose and low speed switching applications.

Features
• High DC Current Gain − hFE = 2500 (typ.) at IC = 4.0
• Collector−Emitter Sustaining Voltage at 100 mAdc
   VCEO(sus)
      = 80 Vdc (min) − BDX33B, BDX334B
      = 100 Vdc (min) − BDX33C, BDX334C
• Low Collector−Emitter Saturation Voltage
   VCE(sat) = 2.5 Vdc (max) at IC = 3.0 Adc
                                       − BDX33B, 33C/34B, 34C
• Monolithic Construction with Build−In Base−Emitter Shunt Resistors
• These Devices are Pb−Free and are RoHS Compliant*

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