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IRFP2907 データシート

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IRFP2907
IR
International Rectifier IR
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Description
Specifically designed for Automotive applications, this Stripe Planar design of HEXFET® Power MOSFETs utilizes the lastest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this HEXFET power MOSFET are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating. These benefits combine to make this design an extremely efficient and reliable device for use in Automotive applications and a wide variety of other applications.

Benefits
● Advanced Process Technology
● Ultra Low On-Resistance
● Dynamic dv/dt Rating
● 175°C Operating Temperature
● Fast Switching
● Repetitive Avalanche Allowed up to Tjmax

Typical Applications
● Integrated Starter Alternator
● 42 Volts Automotive Electrical Systems

 

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部品番号
コンポーネント説明
PDF
メーカー
Automotive Connectors Automotive USB 2.0, SMT
Unspecified
Automotive Connectors Automotive USB 2.0, SMT
Japan Aviation Electronics Industry, Ltd.
AUTOMOTIVE MOSFET
Kersemi Electronic Co., Ltd.
AUTOMOTIVE MOSFET
Kersemi Electronic Co., Ltd.
AUTOMOTIVE MOSFET
Kersemi Electronic Co., Ltd.
AUTOMOTIVE MOSFET
Kersemi Electronic Co., Ltd.
AUTOMOTIVE MOSFET
Kersemi Electronic Co., Ltd.
AUTOMOTIVE MOSFET
Kersemi Electronic Co., Ltd.
Automotive N-Channel 20 V (D-S) 175 °C MOSFET
Vishay Semiconductors
Automotive P-Channel 60 V (D-S) 175 °C MOSFET
Vishay Semiconductors

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