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K10A50D データシート

部品番号コンポーネント説明メーカー
K10A50D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type Toshiba
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K10A50D

 

Official Site : http://www.semicon.toshiba.co.jp/info/lookup.jsp?pid=TK10A50D&lang=en
 

•  Low drain-source ON-resistance: RDS (ON)= 0.62 Ω(typ.)


•  High forward transfer admittance: ⎪Yfs⎪= 5.0 S (typ.)


•  Low leakage current: IDSS= 10 μA (max) (VDS= 500 V)


•  Enhancement mode: Vth= 2.0 to 4.0 V (VDS= 10 V, ID= 1 mA)

 

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