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LEE1015T データシート

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LEE1015T
Philips
Philips Electronics Philips
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DESCRIPTION
NPN silicon planar epitaxial microwave power transistor in a SOT122A metal ceramic package.

FEATURES
• Diffused emitter ballasting resistors providing excellent current sharing and withstanding a high VSWR
• Interdigitated structure provides high emitter efficiency
• Gold metallization realizes very good stability of the characteristics and excellent lifetime
• Multicell geometry gives good balance of dissipated power and low thermal resistance.

APPLICATIONS
    Intended for use in common emitter, class A power amplifiers for applications that require a high level of linearity.

 

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