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STD12N06 データシート

部品番号コンポーネント説明メーカー
STD12N06 N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR ST-Microelectronics
STMicroelectronics ST-Microelectronics
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N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR

■ TYPICAL RDS(on)= 0.045Ω
■ AVALANCHE RUGGED TECHNOLOGY
■ 100% AVALANCHE TESTED
■ REPETITIVE AVALANCHE DATA AT 100oC
■ LOW GATE CHARGE
■ HIGH CURRENT CAPABILITY
■ LOGIC LEVEL COMPATIBLE INPUT
■ 175oC OPERATING TEMPERATURE
■ APPLICATION ORIENTED CHARACTERIZATION

APPLICATIONS
■ HIGH CURRENT, HIGH SPEED SWITCHING
■ SOLENOID AND RELAY DRIVERS
■ REGULATORS
■ DC-DC & DC-AC CONVERTERS
■ MOTOR CONTROL, AUDIO AMPLIFIERS
■ AUTOMOTIVE ENVIRONMENT (INJECTION, ABS, AIR-BAG, LAMPDRIVERS, Etc.)

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STD12N06 に関連する他のメーカーを検索

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STHV82 N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR ビュー Unspecified
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BSH207 P-channel enhancement mode MOS transistor ビュー NXP Semiconductors.

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