Electronic component search and free download site.
Transistors,MosFET ,Diode,Integrated circuits
ホーム >>> ST-Microelectronics >>> STP60NE03L-10 データシート

STP60NE03L-10 データシート

部品番号
コンポーネント説明
メーカー
Other PDF
  not available.
PDF
DOWNLOAD     
STP60NE03L-10 image

DESCRIPTION
This Power Mosfet is the latest development of SGS-THOMSON unique ”Single Feature Size” strip-based process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalance characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility.

■ TYPICAL RDS(on) = 0.007 Ω
■ EXCEPTIONAL dv/dt CAPABILITY
■ 100% AVALANCHE TESTED
■ LOW GATE CHARGE 100 °C
■ APPLICATION ORIENTED CHARACTERIZATION

APPLICATIONS
■ HIGH CURRENT, HIGH SPEED SWITCHING
■ SOLENOID AND RELAY DRIVERS
■ MOTOR CONTROL, AUDIO AMPLIFIERS
■ DC-DC & DC-AC CONVERTERS
■ AUTOMOTIVE ENVIRONMENT (INJECTION, ABS, AIR-BAG, LAMPDRIVERS, Etc. )

 

部品番号
コンポーネント説明
PDF
メーカー
Single N-Channel Enhancement Mode MOSFET
Fairchild Semiconductor
N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Unspecified
N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Unspecified
N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Unspecified
N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Unspecified
N-CHANNEL ENHANCEMENT MODE POWER MOSFET
GTM CORPORATION
N-CHANNEL ENHANCEMENT MODE POWER MOSFET
GTM CORPORATION
N-CHANNEL ENHANCEMENT MODE POWER MOSFET
GTM CORPORATION
N-CHANNEL ENHANCEMENT MODE POWER MOSFET
GTM CORPORATION
N-CHANNEL ENHANCEMENT MODE POWER MOSFET
GTM CORPORATION

Share Link: 

All Rights Reserved© datasheetq.com  [ Privacy Policy ] [ Request Datasheet ] [ Contact Us ]