Electronic component search and free download site.
Transistors,MosFET ,Diode,Integrated circuits

P/N +説明+コンテンツ検索

検索ワード :
部品番号(s) : STP80NE06-10
ST-Microelectronics
STMicroelectronics
コンポーネント説明 : N - CHANNEL ENHANCEMENT MODESINGLE FEATURE SIZE™ ” POWER MOSFET

DESCRIPTION
This POWER MOSFET is the latest development of SGS-THOMSON unique ”SINGLE FEATURE SIZE™ ” strip-based process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility.

■ TYPICAL RDS(on) = 0.0085 Ω
■ EXCEPTIONAL dv/dt CAPABILITY
■ 100% AVALANCHE TESTED
■ APPLICATION ORIENTED CHARACTERIZATION

APPLICATIONS
■ SOLENOID AND RELAY DRIVERS
■ MOTOR CONTROL, AUDIO AMPLIFIERS
■ DC-DC CONVERTERS
■ AUTOMOTIVE ENVIRONMENT

部品番号(s) : STP55NE06L STP55NE06LFP
ST-Microelectronics
STMicroelectronics
コンポーネント説明 : N - CHANNEL ENHANCEMENT MODESINGLE FEATURE SIZE™ ” POWER MOSFET

DESCRIPTION
This POWER MOSFET is the latest development of SGS-THOMSON unique ”SINGLE FEATURE SIZE” process whereby a SINGLE body is implanted on a strip layout structure. The resulting transistor shows extremely high packing density for low onresistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility.

■ TYPICAL RDS(on) = 0.018 Ω
■ EXCEPTIONAL dV/dt CAPABILTY
■ 100% AVALANCHE TESTED
■ LOW GATE CHARGE 100 °C
■ HIGH dV/dt CAPABILITY
■ APPLICATION ORIENTED CHARACTERIZATION

APPLICATIONS
■ DC MOTOR CONTROL
■ DC-DC & DC-AC CONVERTERS
■ SYNCHRONOUS RECTIFICATION

部品番号(s) : STB80NE06-10
ST-Microelectronics
STMicroelectronics
コンポーネント説明 : N - CHANNEL ENHANCEMENT MODESINGLE FEATURE SIZE™ ” POWER MOSFET

DESCRIPTION
This POWER MOSFET is the latest development of SGS-THOMSON unique ”SINGLE FEATURE SIZE™ ” strip-based process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility.

■ TYPICAL RDS(on) = 0.0085 Ω
■ EXCEPTIONAL dv/dt CAPABILITY
■ 100% AVALANCHE TESTED
■ APPLICATION ORIENTED CHARACTERIZATION
■ FOR THROUGH-HOLE VERSION CONTACT SALES OFFICE

APPLICATIONS
■ SOLENOID AND RELAY DRIVERS
■ MOTOR CONTROL, AUDIO AMPLIFIERS
■ DC-DC CONVERTERS
■ AUTOMOTIVE ENVIRONMENT

部品番号(s) : STB55NE06
ST-Microelectronics
STMicroelectronics
コンポーネント説明 : N - CHANNEL ENHANCEMENT MODESINGLE FEATURE SIZE™ ” POWER MOSFET

DESCRIPTION
This POWER MOSFET is the latest development of SGS-THOMSON unique ”SINGLE FEATURE SIZE” strip-based process. The resulting transistor shows extremely high packing density for low onresistance, rugged avalance characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility.

■ TYPICAL RDS(on) = 0.019 Ω
■ EXCEPTIONAL dv/dt CAPABILITY
■ 100% AVALANCHE TESTED
■ LOW GATE CHARGE 100 °C
■ HIGH dv/dt CAPABILITY
■ APPLICATION ORIENTED CHARACTERIZATION
■ FOR THROUGH-HOLE VERSION CONTACT SALES OFFICE

APPLICATIONS
■ DC MOTOR CONTROL
■ DC-DC & DC-AC CONVERTERS
■ SYNCHRONOUS RECTIFICATION

部品番号(s) : STP50NE08
ST-Microelectronics
STMicroelectronics
コンポーネント説明 : N - CHANNEL ENHANCEMENT MODESINGLE FEATURE SIZE™ ” POWER MOSFET

DESCRIPTION
This POWER MOSFET is the latest development of SGS-THOMSON unique ”SINGLE FEATURE SIZE™” strip-based process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility.

■ TYPICAL RDS(on) = 0.020 Ω
■ EXCEPTIONAL dv/dt CAPABILITY
■ 100% AVALANCHE TESTED
■ LOW GATE CHARGE AT 100 oC
■ APPLICATION ORIENTED CHARACTERIZATION

APPLICATIONS
■ HIGH CURRENT, HIGH SPEED SWITCHING
■ SOLENOID AND RELAY DRIVERS
■ MOTOR CONTROL, AUDIO AMPLIFIERS
■ DC-DC & DC-AC CONVERTERS
■ AUTOMOTIVE ENVIRONMENT (INJECTION, ABS, AIR-BAG, LAMPDRIVERS, Etc.)

部品番号(s) : STP55NE06 STP55NE06FP
ST-Microelectronics
STMicroelectronics
コンポーネント説明 : N - CHANNEL ENHANCEMENT MODESINGLE FEATURE SIZE™ ” POWER MOSFET

DESCRIPTION
This POWER MOSFET is the latest development of SGS-THOMSON unique ”SINGLE FEATURE SIZE” strip-based process. The resulting transistor shows extremely high packing density for low onresistance, rugged avalance characteristics and less critical alignment steps therefore a remarkable manufacturingreproducibility.

■ TYPICAL RDS(on) = 0.019 Ω
■ EXCEPTIONAL dv/dt CAPABILITY
■ 100% AVALANCHE TESTED
■ LOW GATE CHARGE 100 °C
■ HIGH dv/dt CAPABILITY
■ APPLICATION ORIENTED CHARACTERIZATION

APPLICATIONS
■ DC MOTOR CONTROL
■ DC-DC & DC-AC CONVERTERS
■ SYNCHRONOUS RECTIFICATION

部品番号(s) : STB50NE08
ST-Microelectronics
STMicroelectronics
コンポーネント説明 : N - CHANNEL ENHANCEMENT MODESINGLE FEATURE SIZE™ ” POWER MOSFET

DESCRIPTION
This POWER MOSFET is the latest development of SGS-THOMSON unique ”SINGLE FEATURE SIZE™ ” strip-based process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility.

■ TYPICAL RDS(on) = 0.020 Ω
■ EXCEPTIONAL dv/dt CAPABILITY
■ 100% AVALANCHE TESTED
■ LOW GATE CHARGE AT 100 °C
■ APPLICATION ORIENTED CHARACTERIZATION
■ FOR THROUGH-HOLE VERSION CONTACT SALES OFFICE

APPLICATIONS
■ HIGH CURRENT, HIGH SPEED SWITCHING
■ SOLENOID AND RELAY DRIVERS
■ MOTOR CONTROL, AUDIO AMPLIFIERS
■ DC-DC & DC-AC CONVERTERS
■ AUTOMOTIVE ENVIRONMENT (INJECTION, ABS, AIR-BAG, LAMPDRIVERS, Etc.)

部品番号(s) : STP40NE03L-20
ST-Microelectronics
STMicroelectronics
コンポーネント説明 : N - CHANNEL ENHANCEMENT MODESINGLE FEATURE SIZE™” POWER MOSFET

DESCRIPTION
This POWER MOSFET is the latest development of SGS-THOMSON unique ”SINGLE FEATURE SIZE™” strip-based process. The resulting transistor shows extremely high packing density for low on resistance, rugged avalanche characteristics and less critical alignment steps therefore a remark able manufacturingreproducibility.

■ TYPICAL RDS(on) = 0.014 Ω
■ EXCEPTIONAL dv/dt CAPABILITY
■ LOW GATE CHARGE A 100 °C
■ APPLICATION ORIENTED CHARACTERIZATION

APPLICATIONS
■ HIGH CURRENT, HIGH SPEED SWITCHING
■ SOLENOID AND RELAY DRIVERS
■ MOTOR CONTROL, AUDIO AMPLIFIERS
■ DC-DC & DC-AC CONVERTERS IN HIGH PERFORMANCE VRMs
■ AUTOMOTIVE ENVIRONMENT (INJECTION, ABS, AIR-BAG, LAMPDRIVERS, Etc.)

部品番号(s) : STP60NE03L-10
ST-Microelectronics
STMicroelectronics
コンポーネント説明 : N - CHANNEL ENHANCEMENT MODESINGLE FEATURE SIZE™ ” POWER MOSFET

DESCRIPTION
This POWER MOSFET is the latest development of SGS-THOMSON unique ”SINGLE FEATURE SIZE” strip-based process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalance characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility.

■ TYPICAL RDS(on) = 0.007 Ω
■ EXCEPTIONAL dv/dt CAPABILITY
■ 100% AVALANCHE TESTED
■ LOW GATE CHARGE 100 °C
■ APPLICATION ORIENTED CHARACTERIZATION

APPLICATIONS
■ HIGH CURRENT, HIGH SPEED SWITCHING
■ SOLENOID AND RELAY DRIVERS
■ MOTOR CONTROL, AUDIO AMPLIFIERS
■ DC-DC & DC-AC CONVERTERS
■ AUTOMOTIVE ENVIRONMENT (INJECTION, ABS, AIR-BAG, LAMPDRIVERS, Etc. )

ST-Microelectronics
STMicroelectronics
コンポーネント説明 : N - CHANNEL ENHANCEMENT MODE SINGLE FEATURE SIZEPOWER MOSFET

DESCRIPTION
This POWER MOSFET is the latest development of SGS-THOMSON unique ”SINGLE FEATURE SIZE” process whereby a SINGLE body is implanted on a strip layout structure. The resulting transistor shows extremely high packing density for low onresistance, rugged avalance characteristics and less critical alignment steps therefore a remarkable manufacturingreproducibility.

■ TYPICAL RDS(on) = 0.09 Ω
■ AVALANCHERUGGED TECHNOLOGY
■ 100% AVALANCHE TESTED
■ 175oC OPERATING TEMPERATURE
■ HIGH dV/dt CAPABILITY
■ APPLICATION ORIENTED CHARACTERIZATION

APPLICATIONS
■ DC MOTOR CONTROL
■ DC-DC & DC-AC CONVERTERS
■ SYNCHRONOUS RECTIFICATION

12345678910 Next



All Rights Reserved© datasheetq.com  [Privacy Policy ] [ Request Datasheet] [Contact Us]