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ST-Microelectronics
STMicroelectronics
コンポーネント説明 : N-channel 60V - 0.08 Ω - 12A IPAK/DPAK STripFET™ II Power MOSFET

DESCRIPTION
This Power MOSFET is the latest development of STMicroelectronis unique "Single Feature Size™" strip based process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility.

■ TYPICAL RDS(on) = 0.08
■ EXCEPTIONAL dv/dt CAPABILITY
■ LOW GATE CHARGE
■ LOW THRESHOLD DRIVE
■ THROUGH-HOLE IPAK (TO-251) Power PACKAGE IN TUBE (SUFFIX “-1")
■ SURFACE-MOUNTING DPAK (TO-252) Power PACKAGE IN TAPE & REEL (SUFFIX “T4")

APPLICATIONS
■ HIGH CURRENT, HIGH SWITCHING SPEED
■ SOLENOID AND RELAY DRIVERS
■ MOTOR CONTROL, AUDIO AMPLIFIERS
■ DC-DC & DC-AC CONVERTERS
■ AUTOMOTIVE ENVIRONMENT

STMICROELECTRONICS
STMicroelectronics
コンポーネント説明 : N-channel 60V - 0.08 Ω - 12A IPAK/DPAK STripFET™ II Power MOSFET

DESCRIPTION
This Power MOSFET is the latest development of STMicroelectronis unique "Single Feature Size™" stripbased process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility.
   
■ TYPICAL RDS(on) = 0.08
■ EXCEPTIONAL dv/dt CAPABILITY
■ LOW GATE CHARGE
■ THROUGH-HOLE IPAK (TO-251) Power
    PACKAGE IN TUBE (SUFFIX “-1")
■ SURFACE-MOUNTING DPAK (TO-252)
    Power PACKAGE IN TAPE & REEL
    (SUFFIX “T4")
   
APPLICATIONS
■ HIGH CURRENT, HIGH SWITCHING SPEED
■ MOTOR CONTROL , AUDIO AMPLIFIERS
■ SOLENOID AND RELAY DRIVERS
■ DC-DC & DC-AC CONVERTERS
■ AUTOMOTIVE ENVIRONMENT
   

コンポーネント説明 : N-channel 24V - 0.0052Ω - 60A - DPAK/IPAK STripFET™ II Power MOSFET

DESCRIPTION
The STD90NH02L utilizes the latest advanced design rules of ST’s proprietary STripFET™ technology. This is suitable fot the most demanding DC-DC converter application where high efficiency is to be achieved.

■ TYPICAL RDS(on) = 0.0052 Ω @ 10 V
■ TYPICAL RDS(on) = 0.007 Ω @ 5 V
■ RDS(ON) * Qg INDUSTRY’s BENCHMARK
■ CONDUCTION LOSSES REDUCED
■ SWITCHING LOSSES REDUCED
■ LOW THRESHOLD DEVICE
■ THROUGH-HOLE IPAK (TO-251) Power
   PACKAGE IN TUBE (SUFFIX “-1")
■ SURFACE-MOUNTING DPAK (TO-252)
   Power PACKAGE IN TAPE & REEL (SUFFIX “T4")

APPLICATIONS
■ SPECIFICALLY DESIGNED AND OPTIMISED FOR HIGH EFFICIENCY DC/DC CONVERTES

コンポーネント説明 : N-channel 24V - 0.0042Ω - 60A - DPAK - IPAK STripFET™ II Power MOSFET

DESCRIPTION
The STD100NH02L utilizes the latest advanced design rules of ST’s proprietary STripFET™ technology. This is suitable fot the most demanding DC-DC converter application where high efficiency is to be achieved.

■ TYPICAL RDS(on) = 0.0042 Ω @ 10 V
■ TYPICAL RDS(on) = 0.005 Ω @ 5 V
■ RDS(ON) * Qg INDUSTRY’s BENCHMARK
■ CONDUCTION LOSSES REDUCED
■ SWITCHING LOSSES REDUCED
■ LOW THRESHOLD DEVICE
■ THROUGH-HOLE IPAK (TO-251) Power PACKAGE IN TUBE (SUFFIX “-1")
■ SURFACE-MOUNTING DPAK (TO-252) Power PACKAGE IN TAPE & REEL (SUFFIX “T4")

APPLICATIONS
■ SPECIFICALLY DESIGNED AND OPTIMISED FOR HIGH EFFICIENCY DC/DC CONVERTES

ST-Microelectronics
STMicroelectronics
コンポーネント説明 : N-channel 30 V, 0.0072 Ω, 48 A DPAK, IPAK, TO-220 STripFET™ V Power MOSFET

Description
This STripFET™V Power MOSFET technology is among the latest improvements, which have been especially tailored to achieve very low on-state resistance providing also one of the best-in-class FOM.

Features
■ RDS(on) * Qg industry benchmark
■ Extremely low on-resistance RDS(on)
■ Very low switching gate charge
■ High avalanche ruggedness
■ Low gate drive Power losses

Application
■ Switching applications

ST-Microelectronics
STMicroelectronics
コンポーネント説明 : N-channel 60V - 0.020 Ω - 28A IPAK/DPAK STripFET™ II Power MOSFET

DESCRIPTION
This Power MOSFET is the latest development of STMicroelectronis unique "Single Feature Size™" stripbased process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility.

■ TYPICAL RDS(on) = 0.020Ω
■ EXCEPTIONAL dv/dt CAPABILITY
■ 100% AVALANCHE TESTED
■ THROUGH-HOLE IPAK (TO-251) Power PACKAGE IN TUBE (SUFFIX “-1")
■ SURFACE-MOUNTING DPAK (TO-252) Power PACKAGE IN TAPE & REEL (SUFFIX “T4")

APPLICATIONS
■ HIGH CURRENT, HIGH SWITCHING SPEED
■ MOTOR CONTROL , AUDIO AMPLIFIERS
■ SOLENOID AND RELAY DRIVERS
■ DC-DC & DC-AC CONVERTERS

コンポーネント説明 : N-channel 60 V, 0.08Ω, 12 A, DPAK, IPAK STripFET™ II Power MOSFET

Description
This Power MOSFET is the latest development of STMicroelectronics unique "Single Feature Size™" strip-based process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility.
   
General features   
■ Exceptional dv/dt capability
■ Low gate charge
   
Applications
■ Switching application
   

STMICROELECTRONICS
STMicroelectronics
コンポーネント説明 : N-channel 100V - 0.22 Ω - 6A IPAK/DPAK LOW GATE CHARGE STripFETPower MOSFET

DESCRIPTION
This MOSFET series realized with STMicroelectronics unique STripFET process has specifically been designed to minimize input capacitance and gate charge. It is therefore suitable as primary switch in advanced highe fficiency, high-frequency isolated DC-DC converters for Telecom and Computer applications. It is also intended for any applications with low gate drive requirements.

■ TYPICAL RDS(on) = 0.22 Ω
■ EXCEPTIONAL dv/dt CAPABILITY
■ 100% AVALANCHE TESTED
■ LOW THRESHOLD DRIVE
■ THROUGH-HOLE IPAK (TO-251) Power PACKAGE IN TUBE (SUFFIX “-1")
■ SURFACE-MOUNTING DPAK (TO-252) Power PACKAGE IN TAPE & REEL (SUFFIX “T4")

コンポーネント説明 : N-channel 60 V, 0.014 Ω, 35 A STripFET™ II Power MOSFET in a DPAK package

DESCRIPTION
This Power MOSFET is the latest development of STMicroelectronis unique "Single Feature Size™" strip-based process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility.

■ TYPICAL RDS(on) = 0.014 Ω
■ LOW THRESHOLD DRIVE
■ GATE CHARGE MINIMIZED
■ SURFACE-MOUNTING DPAK (TO-252) Power PACKAGE IN TAPE & REEL (SUFFIX “T4")

APPLICATIONS
■ DC-AC CONVERTERS
■ AUTOMOTIVE SWITCHING APPLICATION

コンポーネント説明 : MOSFET – Power, N-channel, Logic Level, DPAK/IPAK 12 A, 60 V

Power MOSFET 12 A, 60 V, Logic Level N−Channel DPAK/IPAK

Designed for low voltage, high speed switching applications in Power supplies, converters and Power motor controls and bridge circuits.

Features
• Lower RDS(on)
• Lower VDS(on)
• Tighter VSD Specification
• Lower Diode Reverse Recovery Time
• Lower Reverse Recovery Stored Charge
• NTDV and STDV Prefixes for Automotive and Other Applications
    Requiring Unique Site and Control Change Requirements;
    AEC−Q101 Qualified and PPAP Capable
• These Devices are Pb−Free and are RoHS Compliant

Typical Applications
Power Supplies
• Converters
Power Motor Controls
• Bridge Circuits

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