HIGH VOLTAGE N-Channel MOSFET
WFP7N60
600V N-Channel MOSFET
Features
□ Low Intrinsic Capacitances
□ Excellent Switching Characteristics
□ Extended Safe Operating Area
□ Unrivalled Gate Charge :Qg= 40nC (Typ.)
□ BVDSS=600V,ID=7A
□ RDS(on) :1.2 Ω (Max) @VG=10V
□ 100% Avalanche Tested
TO‐220
G‐Gate,D‐Drain,S‐Sourse
Absolute Maximum Ratings Tc=25℃ unless other wise noted
Symbol
VDSS
ID
VGS
EAS
IAR
PD
TJ,TSTG
TL
Parameter
Drain-Sourse Voltage
Drain Current -continuous (Tc=25℃)
-continuous (Tc=100℃)
Gate-Sourse Voltage
Single Plused Avanche Energy (Note1)
Avalanche Current
(Note2)
Power Dissipation (Tc=25℃)
Operating and Storage Temperature
Range
Maximum lead temperature for soldering
purpose,1/8” from case for 5 seconds
WFP7N60
600
7
4.7
±30
420
7
147
-55 ~ +150
300
Thermal Characteristics
Symbol
RθJC
RθCS
RθJA
Parameter
Thermal Resistance,Junction to Case
Thermal Resistance,Case to Sink
Thermal Resistance,Junction to Ambient
Typ.
--
0.5
--
Max
0.88
--
62.5
Units
V
A
A
V
mJ
A
W
℃
℃
Units
℃/W
℃/W
℃/W
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Rev.A0,August , 2010 |
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