Electronic component search and free download site. Transistors,MosFET ,Diode,Integrated circuits
English
한국어
日本語
русский
简体中文
español
部品番号
コンポーネント説明
2SK2929 データシートの表示(PDF) - Hitachi -> Renesas Electronics
部品番号
コンポーネント説明
メーカー
2SK2929
Silicon N Channel MOS FET High Speed Power Switching
Hitachi -> Renesas Electronics
2SK2929 Datasheet PDF : 10 Pages
1
2
3
4
5
6
7
8
9
10
Reverse Drain Current vs.
Source to Drain Voltage
20
Pulse Test
16
12
10 V
5 V
8
V
GS
= 0, –5 V
4
0
0.4 0.8 1.2 1.6 2.0
Source to Drain Voltage V
SD
(V)
2SK2929
Maximum Avalanche Energy vs.
Channel Temperature Derating
40
I
AP
= 20 A
32
V
DD
= 25 V
duty < 0.1 %
Rg > 50
Ω
24
16
8
0
25 50 75 100 125 150
Channel Temperature Tch (°C)
Vin
15 V
Avalanche Test Circuit
V
DS
Monitor
Rg
50
Ω
L
I
AP
Monitor
D. U. T
V
DD
Avalanche Waveform
E
AR
=
1
2
•
L
•
I
2
AP
•
V
DSS
V
DSS
– V
DD
I
AP
I
D
V
(BR)DSS
V
DS
V
DD
0
7
Share Link:
datasheetq.com [
Privacy Policy
]
[
Request Datasheet
] [
Contact Us
]