C o m m oエnミッeタm接i t地t伝e達r 特o性u t p u t
100
V CE=6V
Ta=25℃
10
1
0.1
0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6
base to colベleーcスto・rエミvッolタt間ag電e圧 VVBE(VB)E(V)
DC forward current gain
直V 流S .電流c 増o l幅l率e -c tコoレrクタc電u流r r特e性n t
10000
1000
Ta=25℃
VCE=10V
100
10
1
0.1
110
100
1000
collectコorレクcタur電r流entI CI(mCA(m) A)
10000
G利a得i帯n 域b幅a積n-d エwミiッdタ電t h流特p性r o d u c t
VS. Emitter current
V CE=5V
Ta=25℃
1000
100
〈T ra n si sto r〉
2SC5626
For High Frequency Amplify Application
Silicon NPN Epitaxial Type (Super Mini type)
C o m m o n eエmミiッtタ接t 地e 出r 力特t 性r a n s f e r
20
180μ A
18
16
14
160μ A
140μ A
Ta=25℃
120μ A
100μ A
12
80μ A
10
60μ A
8
6
40μ A
4
20μ A
2
IB=0μ A
0
02 4
6
8 10 12 14 16 18 20
colleコcレtクorタ・tエoミeッmタi間tt電e圧r voltVaCEg(eV) VCE(V)
c o l l e cコtレoクrタ・エtミoッタe飽m和i電t圧t e r v o l t a g e
V S . c o l-l コeレcクtタo電r流特c 性u r r e n t
10
Ta=25℃
IC/IB=10/1
1
0.1
0.01
0.11
10
100
collectorコcレuクrタr電en流tI ICC((mmA)A)
collector output/input capacitance
V S . C o l入l 出e c力t容o r量-t oベーBスa s電e圧特V o性l t a g e
100.0
f=1MHz
IE=0A
IC=0A
Ta=25℃
10.0
Cob
1.0
Cib
10
0.1
1
10100
emitter エcミuッrrタe電n流t II E(Em(Am)A)
0.1
0.11.010.0
100.0
collectoコrレtクoタb・aベsーe スvo電lt圧ag eV VCBC(B(VV))
emitteエrミtッoタb・aベsーe スvo電lt圧ag eV VEBE(B(VV))
ISAHAYA ELECTRONICS CORPORATION