2SK1862 データシートの表示（PDF） - Hitachi -> Renesas Electronics

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2SK1862

Silicon N-Channel MOS FET

Hitachi -> Renesas Electronics 

2SK1862, 2SK1863

Absolute Maximum Ratings (Ta = 25°C)

Item

Drain to source voltage

2SK1862

2SK1863

Gate to source voltage

Drain current

Drain peak current

Body to drain diode reverse drain current

Channel dissipation

Channel temperature

Storage temperature

Notes 1. PW ≤ 10 µs, duty cycle ≤ 1 %

2. Value at Tc = 25 °C

Symbol

VDSS

VDSS

VGSS

ID

I *1

D(pulse)

I DR

Pch*2

Tch

Tstg

Ratings

Unit

450

V

500

±30

V

3

A

12

A

3

A

25

W

150

°C

–55 to +150

°C

2

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