2SK3076(L),2SK3076(S)
Absolute Maximum Ratings (Ta = 25°C)
Item
Symbol
Drain to source voltage
VDSS
Gate to source voltage
VGSS
Drain current
ID
Drain peak current
I Note1
D(pulse)
Body-drain diode reverse drain current IDR
Channel dissipation
Pch Note2
Channel temperature
Tch
Storage temperature
Tstg
Note: 1. PW ≤ 10µs, duty cycle ≤ 1 %
2. Value at Tc = 25°C
Ratings
Unit
500
V
±30
V
7
A
28
A
7
A
60
W
150
°C
–55 to +150
°C
Electrical Characteristics (Ta = 25°C)
Item
Symbol Min
Drain to source breakdown voltage V(BR)DSS 500
Gate to source breakdown voltage V(BR)GSS ±30
Gate to source leak current
I GSS
—
Zero gate voltege drain current IDSS
—
Gate to source cutoff voltage
VGS(off)
2.0
Static drain to source on state
RDS(on)
—
resistance
Forward transfer admittance
Input capacitance
|yfs|
3.5
Ciss —
Output capacitance
Coss —
Reverse transfer capacitance
Crss —
Turn-on delay time
t d(on)
—
Rise time
tr
—
Turn-off delay time
t d(off)
—
Fall time
tf
—
Body–drain diode forward voltage VDF
—
Body–drain diode reverse
recovery time
t rr
—
Note: 4. Pulse test
Typ Max Unit Test Conditions
—
—
V
ID = 10mA, VGS = 0
—
—
V
IG = ±100µA, VDS = 0
—
±10 µA
VGS = ±25V, VDS = 0
—
250 µA
VDS = 400 V, VGS = 0
—
3.0 V
ID = 1mA, VDS = 10V
0.7 0.9 Ω
ID = 4A, VGS = 10VNote4
6.0 —
S
ID = 4A, VDS = 10V Note4
1100 —
pF
VDS = 10V
310 —
pF
VGS = 0
50
—
pF
f = 1MHz
15
—
ns
ID =4A, VGS = 10V
55
—
ns
RL = 7.5Ω
100 —
ns
48
—
ns
0.9 —
V
IF = 7A, VGS = 0
120 —
ns
IF = 7A, VGS = 0
diF/ dt =100A/µs
2