IXFH 60N20F
IXFT 60N20F
Symbol
gfs
Ciss
Coss
Crss
t
d(on)
tr
td(off)
tf
Qg(on)
Qgs
Qgd
RthJC
RthCK
Test Conditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
VDS = 10 V; ID = 0.5 ID25 Note 1
18 26
S
VGS = 0 V, VDS = 25 V, f = 1 MHz
2930
pF
940
pF
320
pF
15
ns
VGS = 10 V, VDS = 0.5 VDSS, ID = 0.5 ID25
14
ns
RG = 2.0 Ω (External)
42
ns
7.0
ns
100
nC
VGS = 10 V, VDS = 0.5 VDSS, ID = 0.5 ID25
25
nC
46
nC
(TO-247)
0.39 K/W
0.25
K/W
Source-Drain Diode
Symbol
Test Conditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
IS
VGS = 0 V
ISM
Repetitive;
pulse width limited by TJM
VSD
IF = IS, VGS = 0 V, Note 1
trr
QRM
IF = 25A,-di/dt = 100 A/µs, VR = 100 V
I
RM
60 A
240 A
1.5 V
200 ns
0.8
µC
10
A
TO-247 AD Outline
123
Terminals:
1 - Gate
2 - Drain
3 - Source
Tab - Drain
Dim. Millimeter
Min. Max.
A
4.7 5.3
A1
2.2 2.54
A2
2.2 2.6
b
1.0 1.4
b1 1.65 2.13
b2 2.87 3.12
C
.4
.8
D 20.80 21.46
E 15.75 16.26
e 5.20 5.72
L 19.81 20.32
L1
4.50
∅P 3.55 3.65
Q 5.89 6.40
R 4.32 5.49
S 6.15 BSC
Inches
Min. Max.
.185 .209
.087 .102
.059 .098
.040 .055
.065 .084
.113 .123
.016 .031
.819 .845
.610 .640
0.205 0.225
.780 .800
.177
.140 .144
0.232 0.252
.170 .216
242 BSC
TO-268 Outline
Note: 1. Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %
Min Recommended Footprint
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents:
4,835,592
4,850,072
4,881,106
4,931,844
5,017,508
5,034,796
Dim. Millimeter
Min. Max.
A
4.9 5.1
A1
2.7 2.9
A2
.02 .25
b 1.15 1.45
b2
1.9 2.1
C
.4 .65
D 13.80 14.00
E 15.85 16.05
E1 13.3 13.6
e
5.45 BSC
H 18.70 19.10
L 2.40 2.70
L1 1.20 1.40
Inches
Min. Max.
.193 .201
.106 .114
.001 .010
.045 .057
.75 .83
.016 .026
.543 .551
.624 .632
.524 .535
.215 BSC
.736 .752
.094 .106
.047 .055
L2 1.00 1.15 .039 .045
L3
0.25 BSC
.010 BSC
L4 3.80 4.10 .150 .161
5,049,961
5,063,307
5,187,117
5,237,481
5,486,715 6,306,728B1
5,381,025