Memory ICs
BR93LC56 / BR93LC56F / BR93LC56RF / BR93LC56FV
For low voltage operation (unless otherwise noted, Ta = – 40 to + 85°C, VCC = 3V ± 10%)
Parameter
Symbol Min. Typ. Max. Unit
SK clock frequency
fSK
—
— 250 kHz
SK "H" time
tSKH
1
—
—
µs
SK "L" time
tSKL
1
—
—
µs
CS "L" time
tCS
1
—
—
µs
CS setup time
tCSS
200
—
—
ns
DI setup time
tDIS
400
—
—
ns
CS hold time
tCSH
0
—
—
ns
DI hold time
tDIH
400
—
—
ns
Data "1" output delay time
tPD1
—
—
2
µs
Data "0" output delay time
tPD0
—
—
2
µs
Time from CS to output confirmation
tSV
—
—
2
µs
Time from CS to output High impedance tDF
—
— 400 ns
Write cycle time
tE / W
—
—
25
ms
When reading at low voltage (unless otherwise noted, Ta = – 40 to + 85°C, VCC = 2.0V)
Parameter
Symbol Min. Typ. Max. Unit
SK clock frequency
fSK
—
— 200 kHz
SK "H" time
tSKH
2
—
—
µs
SK "L" time
tSKL
2
—
—
µs
CS "L" time
tCS
2
—
—
µs
CS setup time
tCSS
400
—
—
ns
DI setup time
tDIS
800
—
—
ns
CS hold time
tCSH
0
—
—
ns
DI hold time
tDIH
800
—
—
ns
Data "1" output delay time
tPD1
—
—
4
µs
Data "0" output delay time
tPD0
—
—
4
µs
Time from CS to output High impedance tDF
—
— 800 ns
᭺ Not designed for radioactive rays.
5