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BF1212 データシートの表示(PDF) - Philips Electronics
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BF1212
N-channel dual-gate PoLo MOS-FETs
Philips Electronics
BF1212 Datasheet PDF : 15 Pages
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Philips Semiconductors
N-channel dual-gate MOS-FETs
Product specification
BF1212; BF1212R; BF1212WR
handbook, full pagewidth
VAGC
R1
10 k
Ω
C1
4.7 nF
RGEN
50
Ω
VI
C2
R2
50
Ω
4.7 nF
RG1
VGG
C3
4.7 nF
DUT
L1
≈
2.2
µ
H
C4
RL
50
Ω
4.7 nF
VDS
MGS315
Fig.21 Cross-modulation test set-up.
Table 1
Scattering parameters: V
DS
= 5 V; V
G2-S
= 4 V; I
D
= 12 mA; T
amb
= 25
°
C
f
(MHz)
50
100
200
300
400
500
600
700
800
900
1 000
s
11
MAGNITUDE
(ratio)
0.990
0.988
0.983
0.974
0.969
0.958
0.947
0.936
0.924
0.910
0.896
ANGLE
(deg)
−
3.39
−
6.76
−
13.40
−
19.86
−
26.46
−
32.73
−
38.83
−
44.75
−
50.51
−
56.18
−
61.64
s
21
MAGNITUDE
(ratio)
3.288
3.280
3.261
3.218
3.205
3.141
3.086
3.017
2.949
2.870
2.785
ANGLE
(deg)
176.5
173.0
166.1
159.0
152.6
145.9
139.5
133.1
126.9
120.5
114.7
s
12
MAGNITUDE
(ratio)
0.0005
0.0011
0.0021
0.0030
0.0039
0.0045
0.0049
0.0051
0.0051
0.0049
0.0045
ANGLE
(deg)
86.9
85.6
81.2
77.5
74.6
72.4
70.9
69.5
69.9
69.8
72.7
s
22
MAGNITUDE
(ratio)
0.990
0.990
0.991
0.991
0.994
0.994
0.993
0.991
0.981
0.984
0.980
ANGLE
(deg)
−
1.66
−
3.30
−
6.62
−
9.92
−
13.30
−
16.56
−
19.77
−
22.78
−
25.77
−
28.72
−
31.77
Table 2
Noise data: V
DS
= 5 V; V
G2-S
= 4 V; I
D
= 12 mA; T
amb
= 25
°
C
f
(MHz)
F
min
(dB)
Γ
opt
(ratio)
400
0.9
0.695
800
1.1
0.634
(deg)
13.87
30.30
R
n
(
Ω
)
28.5
32.85
2003 Nov 14
10
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