BUL66A データシートの表示（PDF） - Semelab - > TT Electronics plc
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BUL66A
Semelab - > TT Electronics plc
BUL66A Datasheet PDF : 2 Pages
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SEME
LAB
MECHANICAL DATA
Dimensions in mm
6.40 (0.252)
6.78 (0.267)
5.21 (0.205)
5.46 (0.215)
123
2.18 (0.086)
2.44 (0.096)
0.84 (0.033)
0.94 (0.037)
1.09 (0.043)
1.30 (0.051)
5.97 (0.235)
6.22 (0.245)
0.76 (0.030)
1.14 (0.045)
0.64 (0.025)
0.89 (0.035)
8.89 (0.350)
9.78 (0.385)
BUL66A
ADVANCED
DISTRIBUTED BASE DESIGN
HIGH VOLTAGE
HIGH SPEED NPN
SILICON POWER TRANSISTOR
Designed for use in
electronic ballast applications
• SEMEFAB DESIGNED AND DIFFUSED DIE
• HIGH VOLTAGE
• FAST SWITCHING
• HIGH ENERGY RATING
2.31
(0.091)
Typ.
2.31
(0.091)
Typ.
4.60 (0.181)
Typ.
0.46 (0.018)
0.61 (0.024)
1.04 (0.041)
1.14 (0.045)
Pin 1 – Base
I-PAK(TO251)
Pin 2 – Collector
Pin 3 – Emitter
FEATURES
• Multi–base for efficient energy distribution
across the chip resulting in significantly
improved switching and energy ratings
across full temperature range.
• Ion implant and high accuracy masking for
tight control of characteristics from batch to
batch.
• Triple Guard Rings for improved control of
high voltages.
ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated)
VCBO
Collector – Base Voltage(IE=0)
350V
VCEO
Collector – Emitter Voltage (IB = 0)
160V
VEBO
Emitter – Base Voltage (IC = 0)
10V
IC
Continuous Collector Current
16A
IC(PK)
Peak Collector Current
25A
IB
Base Current
5A
Ptot
Total Dissipation at Tcase = 25°C
25W
Tstg
Operating and Storage Temperature Range
–55 to +150°C
Semelab plc. Telephone (01455) 556565. Telex: 341927. Fax (01455) 552612.
Prelim. 2/97
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