HA16116FP/FPJ, HA16121FP/FPJ
Electrical Characteristics (cont.)
(Ta = 25°C, VIN = 12 V, fOSC = 300 kHz)
Item
Symbol Min
Typ
Max
Unit Test Conditions
UVL block VIN high-level threshold
VTUH1
3.3
3.6
3.9
V
voltage
VIN low-level threshold
VTUL1
3.0
3.3
3.6
V
voltage
VIN threshold differential ∆VTU1
0.1
0.3
0.5
V
∆VTU1 = VTUH1 – VTUL1
voltage
Vref high-level threshold VTUH2
1.7
2.0
2.3
V
voltage
Vref low-level threshold VTUL2
1.4
1.7
2.0
V
voltage
Vref threshold differential ∆VTU2
0.1
0.3
0.5
V
∆VTU2 = VTUH2 – VTUL2
voltage
ON/OFF
ON/OFF pin sink current ION/OFF
—
35
50
µA ON/OFF pin = 5 V
block
IC on-state voltage
VON
1.8
2.1
2.4
V
IC off-state voltage
VOFF
1.1
1.4
1.7
V
ON/OFF threshold
differential voltage
∆VON/OFF
0.5
0.7
0.9
V
TIM block TIM pin sink current in
ITIM1
0
steady state
—
10
µA
CL pin = VIN, VTIM = 0.3 V
TIM pin sink current at
ITIM2
overcurrent detection
Common
Operating current
IIN
block
10
6.0
8.5
11.0
15
8.5
12.1
15.7
20
11.1
15.7
20.5
mA CL pin = VIN – 0.3 V
VTIM = 0.3 V
mA
CL = 0 pF (to VIN) *1, *2
mA
CL = 500 pF (to VIN) *1, *2
mA CL = 1000 pF (to VIN) *1, *2
Off current
IOFF
0
0
—
10
µA HA16116FP ON/OFF
120
150
µA HA16121FP pin = 0 V
Notes: 1. CL is load capacitor for Power MOS FET’s gate, and CL = 1000 pF to GND in the case of
HA16121 – ch 2.
2. CL in channel 2 of HA16121 is connected to GND.
Rev.2.0, Sep.18.2003, page 24 of 33