MJE13003
CLASSIFICATION OF hFE1
RANK
RANGE
A
8 ~ 16
B
15 ~ 21
NPN EPITAXIAL SILICON TRANSISTOR
C
20 ~ 26
D
25 ~ 31
E
30 ~ 36
F
35 ~ 40
Table 1.Test Conditions for Dynamic Performance
Reverse Bias Safe Operating Area and Inductive Switching
+5V
Vcc
5V
Pw
DUTY CYCLE≦10%
tR, tF≦10ns
1N4933 33
MJE210
0.001μF
33 1N4933
2N2222
1k 1k
68
+5V
RB
IB
1N4933
0.02μF 270
NOTE
PW and Vcc Adjusted for Desired Ic
RB Adjusted for Desired IB1
1k
T.U.T.
2N2905
MJE200
47
100
1/2W
-VBE(OFF)
L
MR826*
Ic
Vclamp
*SELECTED FOR≣1kV
5.1k
VCE
51
Resistive
Switching
+125V
Rc
TUT
RB
SCOPE
D1
-4.0V
Coil Data :
VCC=20V
Ferroxcube core #6656
Vclamp=300V
Full Bobbin ( ~ 200 Turns) #20
GAP for 30 mH/2 A
Lcoil=50mH
Output Waveforms
Ic
Ic(pk)
t1
VCE
VCE or
Vclamp
TIME
tf CLAMPED
t
tf
t
t2
t1 Adjusted to
Obtain Ic
t1≒
Lcoil(Icpk)
Vcc
t2≒
Lcoil(Icpk)
Vclamp
VCC=125V
RC=125Ω
D1=1N5820 or
Equiv.
RC=47Ω
+10.3 V
25μS
Test Equipment
Scope-Tektronics
475 or Equivalent
0
-8.5V
tr, tf<10ns
Duty Cycly=1.0%
RB and Rc adjusted
for desired IB and Ic
Figure 1. Inductive Switching Measurements
ICPK
Vclamp
90% Vclamp 90% Ic
IC
tsv
tRV
tFI
tTI
VCE
IB
90% IB1
tc
10% Vclamp 10%
Icpk 2% Ic
Time
Table 2. Typical Inductive Switching Performance
Ic Tc
AMP ℃
tsv
tRV
tFI
μs μs μs
tTI
tc
μs μs
0.5 25 1.3 0.23 0.30 0.35 0.30
100 1.6 0.26 0.30 0.40 0.36
1 25 1.5 0.10 0.14 0.05 0.16
100 1.7 0.13 0.26 0.06 0.29
1.5 25 1.8 0.07 0.10 0.05 0.16
100 3 0.08 0.22 0.08 0.28
NOTE: All Data Recorded in the Inductive Switching
Circuit in Table 1
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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QW-R204-004,E