MMBTH10
NPN SILICON TRANSISTOR
ABSOLUTE MAXIMUM RATING (Ta=25℃)
PARAMETER
SYMBOL
RATINGS
UNIT
Collector-base voltage
VCBO
30
V
Collector-emitter voltage
VCEO
25
V
Emitter-base voltage
VEBO
3
V
Total Power Dissipation
PC
225
mW
Collector current
IC
50
mA
Junction Temperature
TJ
150
℃
Storage Temperature
TSTG
-55 ~ +150
℃
Note Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
ELECTRICAL CHARACTERISTICS (Ta=25℃, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN TYP MAX UNIT
Collector-Base Breakdown Voltage BVCBO IC=100μA
30
V
Collector-Emitter Breakdown Voltage BVCEO IC=1mA
25
V
Emitter-Base Breakdown Voltage
BVEBO IE=10μA
3
V
Collector-Emitter Saturation Voltage VCE(SAT) IC=4mA, IB=400μA
500 mV
Base-Emitter on Voltage
VBE(ON) VCE=10V, IC=4mA
950 mV
Collector Cut-off Current
ICBO VCB=25V
100 nA
Emitter Cut-off Current
IEBO VEB=2V
100 nA
DC Current Gain
hFE VCE=10V, IC=4mA
60
Output Capacitance
Cob VCB=10V, f=1MHZ
0.7
pF
Current Gain Bandwidth Product
fT VCE=10V, IC=4mA, f=100MHz 650
MHz
CLASSIFICATION OF hFE
RANK
RANGE
A
60-100
B
90-130
C
120-200
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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