MTP1N80E
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain–to–Source Breakdown Voltage
(VGS = 0 Vdc, ID = 0.25 mAdc)
Temperature Coefficient (Positive)
V(BR)DSS
800
—
Vdc
—
—
0.981
—
mV/°C
Zero Gate Voltage Drain Current
(VDS = 800 Vdc, VGS = 0 Vdc)
(VDS = 800 Vdc, VGS = 0 Vdc, TJ = 125°C)
Gate–Body Leakage Current (VGS = ± 20 Vdc, VDS = 0 Vdc)
ON CHARACTERISTICS (1)
Gate Threshold Voltage
(VDS = VGS, ID = 250 µAdc)
Temperature Coefficient (Negative)
IDSS
IGSS
µAdc
—
—
10
—
—
100
—
—
100
nAdc
VGS(th)
Vdc
2.0
3.3
4.0
—
6.3
—
mV/°C
Static Drain–to–Source On–Resistance (VGS = 10 Vdc, ID = 0.5 Adc)
Drain–to–Source On–Voltage
(VGS = 10 Vdc, ID = 1.0 Adc)
(VGS = 10 Vdc, ID = 0.5 Adc, TJ = 125°C)
Forward Transconductance (VDS = 15 Vdc, ID = 0.5 Adc)
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
(VDS = 25 Vdc, VGS = 0 Vdc,
f = 1.0 MHz)
SWITCHING CHARACTERISTICS (2)
Turn–On Delay Time
Rise Time
Turn–Off Delay Time
Fall Time
Gate Charge
(VDD = 400 Vdc, ID = 1.0 Adc,
VGS = 10 Vdc,
RG = 9.1 Ω)
(VDS = 400 Vdc, ID = 1.0 Adc,
VGS = 10 Vdc)
SOURCE–DRAIN DIODE CHARACTERISTICS
Forward On–Voltage (1)
(IS = 1.0 Adc, VGS = 0 Vdc)
(IS = 1.0 Adc, VGS = 0 Vdc, TJ = 125°C)
RDS(on)
VDS(on)
gFS
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
QT
Q1
Q2
Q3
VSD
—
10.3
12
Ohm
Vdc
—
11
14.4
—
—
12.6
0.4
1.4
—
mhos
—
297
420
pF
—
29
40
—
6.0
10
—
9.0
20
ns
—
10
20
—
20
40
—
27
50
—
9.6
14
nC
—
2.1
—
—
4.2
—
—
4.7
—
Vdc
—
0.82
1.2
—
0.7
—
Reverse Recovery Time
(IS = 1.0 Adc, VGS = 0 Vdc,
dIS/dt = 100 A/µs)
Reverse Recovery Stored Charge
INTERNAL PACKAGE INDUCTANCE
Internal Drain Inductance
(Measured from contact screw on tab to center of die)
(Measured from the drain lead 0.25″ from package to center of die)
trr
ta
tb
QRR
LD
—
317
—
ns
—
56
—
—
261
—
—
0.98
—
µC
nH
—
3.5
—
—
4.5
—
Internal Source Inductance
LS
(Measured from the source lead 0.25″ from package to source bond pad)
nH
—
7.5
—
(1) Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2%.
(2) Switching characteristics are independent of operating junction temperature.
2
Motorola TMOS Power MOSFET Transistor Device Data