XP132A01A0SR
Power MOS FET
■ Electrical Characteristics
Drain/Source Voltage vs. Capacitance
10000
Vgs=0V, f=1MHz
Switching Time vs. Drain Current
1000
Vgs=-5V, Vdd≒-10V, PW=10µsec. duty≦1%
tf
1000
100
0
Ciss
Coss
Crss
-5
-10
-15
-20
Drain/Source Voltage:Vds (V)
Gate/Source Voltage vs. Gate Charge
Vds=-10V, Id=-5A
-10
u
-8
-6
-4
-2
0
0
5
10
15
20
25
Gate Charge:Qg (nc)
100
td(off)
td(on)
tr
10
-0.1
-1
-10
Drain Current:Id (A)
Reverse Drain Current vs. Source/Drain Voltage
Pulse Test
-15
-10
Vgs=-5V
-5
0.5V
0
0
-0.2
-0.4
-0.6
-0.8
-1
Source/Drain Voltage:Vsd (V)
10
1
0.1
0.01
0.001
0.0001
0.0001
Standardized Transition Thermal Resistance vs. Pulse Width
Rth (ch-a)=50˚C/W, (Implemented on a glass epoxy PCB)
Single Pulse
0.001
0.01
0.1
1
Pulse Width:PW (sec)
10
100
376