M28F008
REVISION HISTORY
Number
-002
Description
Revised Extended Cycling Capability to
10K Block Erase Cycles
160K Block Erase Cycles per Chip
Changed IPPS Standby current spec
from g10 mA to g15 mA
Removed typical Block Erase times
Number
-003
Description
PWD renamed RP for JEDEC stan-
dardization compatibility
Added MF 42-Lead Flatpack
Added 100 ns access time specs
Combined VPP Standby current and
VPP Read current into one VPP Stand-
by condition with two test conditions
(DC Characteristics table)
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