NXP Semiconductors
High-speed diodes
Product data sheet
1N4531; 1N4532
FEATURES
• Hermetically sealed leaded glass
SOD68 (DO-34) package
• High switching speed: max. 4 ns
• Continuous reverse voltage:
max. 75 V
• Repetitive peak reverse voltage:
max. 75 V
• Repetitive peak forward current:
max. 450 mA.
APPLICATIONS
• High-speed switching
• Protection diodes in reed relays.
DESCRIPTION
The 1N4531, 1N4532 are high-speed switching diodes fabricated in planar
technology, and encapsulated in hermetically sealed leaded glass
SOD68 (DO-34) packages.
handbook, halfpkage
a
MAM156
The diodes are type branded.
Fig.1 Simplified outline (SOD68; DO-34) and symbol.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
VRRM
VR
IF
IFRM
IFSM
repetitive peak reverse voltage
continuous reverse voltage
continuous forward current
repetitive peak forward current
non-repetitive peak forward current
Ptot
total power dissipation
Tstg
storage temperature
Tj
junction temperature
CONDITIONS
see Fig.2
square wave; Tj = 25 °C prior to
surge; see Fig.4
t = 1 µs
t = 1 ms
t=1s
Tamb = 25 °C
MIN.
−
−
−
−
MAX.
75
75
200
450
UNIT
V
V
mA
mA
−
4A
−
1A
−
0.5 A
−
500 mW
−65 +200 °C
−
200 °C
1996 Sep 03
2