Philips Semiconductors
High-speed double diode array
Product specification
BAW56S
ELECTRICAL CHARACTERISTICS
Tj = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
Per diode
VF
forward voltage
IR
reverse current
Cd
diode capacitance
trr
reverse recovery time
Vfr
forward recovery voltage
CONDITIONS
MAX. UNIT
see Fig.3
IF = 1 mA
IF = 10 mA
IF = 50 mA
IF = 150 mA
see Fig.5
715
mV
855
mV
1
V
1.25
V
VR = 25 V
30
nA
VR = 75 V
1
µA
VR = 25 V; Tj = 150 °C
30
µA
VR = 75 V; Tj = 150 °C
50
µA
VR = 0; f = 1 MHz; see Fig.6
2
pF
when switched from IF = 10 mA to IR = 10 mA;
4
ns
RL = 100 Ω; measured at IR = 1 mA; see Fig.7
when switched from IF = 10 mA; tr = 20 ns; see Fig.8 1.75
V
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS
Rth j-s
thermal resistance from junction to soldering point note 1
Note
1. One or more diodes loaded.
VALUE
255
UNIT
K/W
1997 Oct 21
3