Rev. 1.1
UTRON
UT62L12816(I)
128K X 16 BIT LOW POWER CMOS SRAM
REVISION HISTORY
REVISION
Preliminary Rev. 0.5
Preliminary Rev. 0.6
Preliminary Rev. 0.7
Rev. 1.0
Rev. 1.1
Original.
DESCRIPTION
1. The symbols CE# and OE# and WE# are revised as. CE
and OE and WE .
2. Separate Industrial and Consumer SPEC.
3. Add access time 55ns range.
1. Revised Vcc range:
a、 55ns (max.) for Vcc=2.7V~3.6V
b、 70/100ns (max.) for Vcc=2.5V~3.6V
2. Revised block diagram
3. Revised DC ELECTRICAL CHARACTERISTICS:
c、 Revised standby current
ISB1=20/3uA(max.) for TA=0℃~50℃
ISB2=80/10uA(max.) for TA=-40℃~85℃
d、 Revised Icc=35/30/25mA(max.)
4. Revised AC ELECTRICAL CHARACTERISTICS:
e、 Revised symbol name tHZB as tBHZ
f、 Revised symbol name tLZB as tBLZ
g、 Revised symbol name tPWB as tBW
5. Revised waveforms
6. Revised IDR=50/5uA(max.)
1. Revised DC ELECTRICAL CHARACTERISTICS:
a、 Revised VIH as 2.2V
2. Revised AC ELECTRICAL CHARACTERISTICS:
b、 Revised tBLZ as 10ns (min.)
3. Revised 48-pin TFBGA package outline dimension:
c、 Rev. 0.7:ball diameter=0.3mm
d、 Rev. 1.0:ball diameter=0.35mm
Add order information for lead free product
DATE
Mar, 2001
Jun 21,2001
Nov 6, 2001
Apr 23,2002
May 09,2003
UTRON TECHNOLOGY INC.
1F, No. 11, R&D Rd. II, Science-Based Industrial Park, Hsinchu, Taiwan, R. O. C.
TEL: 886-3-5777882 FAX: 886-3-5777919
1
P80049