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NGTB50N120FL2WG データシートの表示(PDF) - ON Semiconductor
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コンポーネント説明
メーカー
NGTB50N120FL2WG
IGBT - Field Stop II
ON Semiconductor
NGTB50N120FL2WG Datasheet PDF : 8 Pages
1
2
3
4
5
6
7
8
1
50% Duty Cycle
0.1
20%
10%
5%
0.01
2%
0.001
0.0001
1E−06
Single Pulse
1E−05
NGTB50N120FL2WG
TYPICAL CHARACTERISTICS
R
q
JC
= 0.28
Junction
R
1
C
1
R
2
R
n
Case
R
i
(
°
C/W) C
i
(J/
°
C)
0.048747 0.006487
0.043252 0.023120
0.051703 0.061163
0.107932 0.092651
C
2
C
n
0.025253 1.252250
Duty Factor = t
1
/t
2
Peak T
J
= P
DM
x Z
q
JC
+ T
C
0.0001
0.001
0.01
0.1
1
ON−PULSE WIDTH (s)
Figure 24. IGBT Transient Thermal Impedance
1
50% Duty Cycle
20%
0.1
10%
5%
2%
0.01
Single Pulse
0.001
1E−06
1E−05
R
q
JC
= 0.50
Junction
R
1
R
2
C
1
C
2
Duty Factor = t
1
/t
2
Peak T
J
= P
DM
x Z
q
JC
+ T
C
0.0001
0.001
0.01
ON−PULSE WIDTH (s)
Figure 25. Diode Transient Thermal Impedance
R
n
Case
R
i
(
°
C/W) C
i
(J/
°
C)
0.007703 0.000130
0.010613 0.000942
0.010097 0.003132
0.032329 0.003093
C
n
0.046791 0.006758
0.044179 0.022635
0.083870 0.119232
0.044938 0.703706
0.217376 0.460033
0.1
1
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