SPECIFICATION
BM1117
ABSOLUT MAXIMUM RATINGS(Note 1)
Power Dissipation
Input Voltage
Operating Junction Temperature
Control Section
Power Transistor
Storage temperature
Internally limited
22V
0°C to 125°CS
0°C to 150°C
- 65°C to +150°C
Soldering information
Lead Temperature (10 sec)
300°C
Thermal Resistance
TO-252 package
φ JA= 80°C/W
SOT-223 package
φ JA= 90°C/W*
* With package soldering to copper area over
backside ground plane or internal power plane φJA
can vary from 46°C/W to >90°C/W depending on
mounting technique and the size of the copper area.
ELECTRICAL CHARACTERISTICS
Electrical Characteristics at IOUT = 0 mA, and TJ = +25°C unless otherwise specified.
Parameter
Device
Conditions
Min Typ Max Units
Reference Voltage
BM1117
(Note 2)
Output Voltage
(Note 2)
BM1117-1.5
BM1117-1.8
BM1117-2.5
BM1117-2.85
BM1117-3.3
BM1117-5.0
Line Regulation BM1117
BM1117-1.5
IOUT = 10 mA
10mA ≤IOUT ≤1A,
1.5V≤ (VIN - VOUT) ≤12V
0≤IOUT ≤1A ,3.0V≤VIN ≤12V
0 ≤IOUT ≤1A , 3.3V≤VIN ≤12V
0 ≤IOUT≤1A ,4.0V≤VIN ≤12V
0 ≤IOUT ≤1A ,4.35V≤VIN ≤12V
0 ≤IOUT ≤1A ,4.75V ≤VIN ≤12V
0 ≤IOUT ≤1A , 6.5V ≤VIN ≤12V
IOUT = 10 mA ,
1.5V≤ (VIN - VOUT) ≤12V
3.0V≤VIN ≤12V
BM1117-1.8
3.3V≤VIN ≤12V
BM1117-2.5
4.0V≤VIN ≤12V
BM1117-2.85
4.35V≤VIN ≤12V
BM1117-3.3
4.75V≤VIN ≤12V
BM1117-5.0
6.5V≤VIN ≤12V
1.238 1.250 1.262
V
1.225 1.250 1.270
V
1.485 1.500 1.515
V
1.476 1.500 1.524
V
1.782 1.800 1.818
V
1.773 1.800 1.827
V
2.475 2.500 2.525
V
2.460 2.500 2.560
V
2.82 2.850 2.88
V
2.79 2.850 2.91
V
3.267 3.300 3.333
V
3.235 3.300 3.365
V
4.950 5.000 5.050
V
4.900 5.000 5.100
V
0.015 0.2
%
0.035 0.2
%
0.3
5
mV
0.6
6
mV
0.3
5
mV
0.6
6
mV
0.3
6
mV
0.6
6
mV
0.3
6
mV
0.6
6
mV
0.5
10
mV
1.0
10
mV
0.5
10
mV
1.0
10
mV
BOOKLY MICRO ELECTRONICS LIMITED CORP.