< SMALL-SIGNAL TRANSISTOR >
2SA1235A 2SA1602A
2SA1993
FOR LOW FREQUENCY AMPLIFY APPLICATION
SILICON PNP EPITAXIAL TYPE(Super mini type)
MAXIMUM RATINGS(Ta=25℃)
Symbol
Parameter
VCBO
VEBO
VCEO
IC
PC
Tj
Tstg
Collector to Base voltage
Emitter to Base voltage
Collector to Emitter
voltage
Collector current
Collector dissipation
Junction temperature
Storage temperature
2SA1235A
-60
200
Ratings
2SA1602A
-60
-6
-50
200
200
+150
-55~+150
Unit
2SA1993
-50
V
V
V
mA
450
mW
℃
℃
ELECTRICAL CHARACTERISTICS(Ta=25℃)
Parame
ter
Symbol
Test conditions
V(BR)CEO
I CBO
I EBO
hFE*
C to E break down voltage
Collector cut off current
Emitter cut off current
DC forward current gain
DC forward current gain
I C=-100μA,RBE=∞
2SA1993
2SA1235A,2SA1602A
VEB=-6V,I C =0
VCE=-6V,I C =-1mA
VCB=-50V,I E =0
VCB=-60V,I E =0
hFE
C to E Saturation Vlotage
2SA1993
2SA1235A,2SA1602A
VCE=-6V,I C =-0.1mA
VCE(sat)
fT
Cob
NF
Gain bandwidth product
Collector output capacitance
C to E break down voltage
Noise figure
I C =-100mA,I B =-10mA
VCE=-6V,I E =10mA
VCB=-6V,I E =0,f=1MHz
VCE=-6V,I E =0.3mA,f=100Hz,RG=10kΩ
*: It shows hFE classification in below table.
Limits
Unit
Min Typ Max
-50
V
-0.1 μA
-0.1
-0.1 μA
150
500
-
50
-
90
-
-0.3
V
200
MHz
4.0
pF
20
dB
hFE 2SA1235A
2SA1602A
2SA1993
E
150~300
F
250~500
ISAHAYA ELECTRONICS CORPORATION