TSAL7200
Vishay Semiconductors High Power Infrared Emitting Diode,
940 nm, GaAlAs/GaAs
0° 10° 20°
30°
40°
1.0
0.9
50°
0.8
60°
0.7
70°
80°
14329
0.6 0.4 0.2 0
Fig. 9 - Relative Radiant Intensity vs. Angular Displacement
PACKAGE DIMENSIONS in millimeters
A
C
R 2.49 (sphere)
0.6
+
-
0.2
0.1
Area not plane
Ø 5 ± 0.15
0.5
+ 0.15
- 0.05
2.54 nom.
0.5
+ 0.15
- 0.05
Drawing-No.: 6.544-5259.06-4
Issue: 6; 19.05.09
19257
www.vishay.com
4
For technical questions, contact: emittertechsupport@vishay.com
technical drawings
according to DIN
specifications
Document Number: 81012
Rev. 1.8, 29-Jun-09