ELECTRICAL CHARACTERISTICS – continued (TC = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
ON CHARACTERISTICS
Gate Threshold Voltage
(VDS = 6 V, ID = 25 µA)
Forward Transconductance
(VDS = 6 V, ID = 200 mA)
Resistance Drain–Source
(VGS = 4 V, ID = 100 mA)
VGS(th)
1
gfs
–
RDS(on)
–
2
3
Vdc
550
–
mmhos
1
2.5
Ω
DYNAMIC CHARACTERISTICS
Input Capacitance
(VDS = 6 V, VGS = 0, f = 1 MHz)
Output Capacitance
(VDS = 6 V, VGS = 0, f = 1 MHz)
Feedback Capacitance
(VDS = 6 V, VGS = 0, f = 1 MHz)
Ciss
–
14
–
pF
Coss
–
11
–
pF
Crss
–
1.8
–
pF
FUNCTIONAL CHARACTERISTICS
Power Gain
Gps
(VDD = 5.8 Vdc, Pin = 20 dBm, IDQ = 150 mA, f = 900 MHz)
Drain Efficiency
ηD
(VDD = 5.8 Vdc, Pin = 20 dBm, IDQ = 150 mA, f = 900 MHz)
Ruggedness Test
Ψ
(VDD = 5.8 Vdc, Pin = 20 dBm, IDQ = 150 mA, f = 900 MHz,
Load VSWR = 20:1, All Phase Angles at Frequency Test)
9.5
10
50
55
–
dB
–
%
No Degradation in Output Power after Test
Table 1. Large Signal Impedance
VDD = 5.8 V, Pin = 20 dBm, IDQ = 150 mA
f
MHz
Zin
Ohms
ZOL*
Ohms
850
7.0 – j6.4
6.1 – j5.1
900
5.2 – j6.5
5.9 – j4.6
950
5.2 – j6.0
6.1 – j4.7
ZOL* is the conjugate of the optimum load
impedance into which the device output operates
at a given output power, voltage and frequency.
MRF9745T1
2
MOTOROLA RF DEVICE DATA