MMBT8050
TRANSISTOR (NPN)
FEATURES
• Complimentary to MMBT8550
• Collector Current: IC=0.8A
MARKING:D9D
MAXIMUM RATINGS (TA=25℃ unless otherwise noted)
Symbol
Parameter
VCBO
Collector-Base Voltage
VCEO
Collector-Emitter Voltage
VEBO
Emitter-Base Voltage
IC
Collector Current -Continuous
PC
Collector Dissipation
Tj
Junction Temperature
Tstg
Storage Temperature
SOT-23
1.BASE
2.EMITTER
3.COLLECTOR
Value
40
25
5
0.8
0.3
150
-55-150
Units
V
V
V
A
W
℃
℃
ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)
Parameter
Symbol
Test conditions
MIN
TYP
Collector-base breakdown voltage
V(BR)CBO
IC= 100µA, IE=0
40
Collector-emitter breakdown voltage
V(BR)CEO
IC=1mA, IB=0
25
Emitter-base breakdown voltage
V(BR)EBO
IE=100µA, IC=0
5
Collector cut-off current
ICBO
VCB=40 V, IE=0
Collector cut-off current
ICEO
VCB=20V, IE=0
Emitter cut-off current
IEBO
VEB= 5V, IC=0
DC current gain
HFE(1)
VCE=1V, IC= 50mA
200
HFE(2)
VCE=1V, IC= 500mA
50
Collector-emitter saturation voltage
VCE(sat) IC=500 mA, IB= 50mA
Base-emitter saturation voltage
Transition frequency
VBE(sat) IC=500 mA, IB= 50mA
VCE=6V, IC= 20mA
fT
f=30MHz
150
MAX UNIT
V
V
V
0.1
µA
0.1
µA
0.1
µA
350
0.6
V
1.2
V
MHz
REV.08
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