Philips Semiconductors
N-channel field-effect transistors
DYNAMIC CHARACTERISTICS
Tj = 25 °C; VDS = 15 V; VGS = 0
SYMBOL
PARAMETER
Cis
input capacitance
Cos
output capacitance
Crs
feedback capacitance
gis
common source input conductance
PMBF5484
PMBF5485; PMBF5486
gfs
common source transfer conductance
PMBF5484
PMBF5485
PMBF5486
gos
common source output conductance
PMBF5484
PMBF5485; PMBF5486
Vn
equivalent input noise voltage
Product specification
PMBF5484; PMBF5485;
PMBF5486
CONDITIONS
f = 1 MHz
f = 1 MHz
f = 1 MHz
MIN.
−
−
−
TYP.
−
−
−
MAX. UNIT
5
pF
2
pF
1
pF
f = 100 MHz
f = 400 MHz
100 −
−
µS
−
−
1
mS
f = 100 MHz
f = 400 MHz
f = 400 MHz
2.5 −
−
mS
3
−
1
mS
3.5 −
1
mS
f = 100 MHz
f = 400 MHz
f = 100 Hz
−
−
75
µS
−
−
100 µS
−
5
−
nV/√Hz
handbook,2h5alfpage
I DSS
(mA)
20
MRC168
15
10
5
0
0
2
4
6
–VGS(off) (V)
VDS = 15 V; Tj = 25 °C; typical values.
Fig.2 Drain current as a function of gate-source
cut-off voltage.
handbook, 1h0alfpage
Yfs
(mS)
8
MRC169
6
4
2
0
0
2
4
6
–VGS(off) (V)
VDS = 15 V; Tj = 25 °C; typical values.
Fig.3 Common source transfer admittance as a
function of gate-source cut-off voltage.
April 1995
4