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IRFP450 データシート

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DESCRIPTION
This power MOSFET is designed using the company’s consolidated strip layout-based MESH OVERLAY process. This technology matches and improves the performances compared with standard parts from various sources.

■ TYPICAL RDS(on) = 0.33 Ω
■ EXTREMELY HIGH dv/dt CAPABILITY
■ 100% AVALANCHE TESTED
■ VERY LOW INTRINSIC CAPACITANCES
■ GATE CHARGE MINIMIZED

APPLICATIONS
■ HIGH CURRENT SWITCHING
■ UNINTERRUPTIBLE POWER SUPPLY (UPS)
■ DC/DC COVERTERS FOR TELECOM, INDUSTRIAL, AND LIGHTING EQUIPMENT.

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部品番号
コンポーネント説明
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メーカー
N - CHANNEL 500V - 0.33Q - 14A - TO-247 PowerMESH™ MOSFET
New Jersey Semiconductor
N-channel 500V - 0.34Ω - 14A TO-220/FP/D2PAK/I2PAK/TO-247 Zener-protected SuperMESHTM Power MOSFET
Unspecified
14A, 500V, 0.400 Ohm, N-Channel Power MOSFET
Intersil
N - CHANNEL 500V - 0.11 Ω - 38A - ISOTOP PowerMESH™ MOSFET
New Jersey Semiconductor
500V, 14A N-Channel MOSFET
Unspecified
500V, 14A N-Channel MOSFET
Alpha and Omega Semiconductor
N - CHANNEL 500V - 1.35ohm - 4.5A - TO-220 PowerMESH] MOSFET
Silikron Semiconductor Co.,LTD.
N-CHANNEL 20A - 600V TO-247 PowerMESH™ IGBT
New Jersey Semiconductor
14A, 50V, 0.100 Ohm, N-Channel Power MOSFET
Intersil
14A, 275V, 0.280 Ohm, N-Channel Power MOSFET
Intersil

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