Electronic component search and free download site.
Transistors,MosFET ,Diode,Integrated circuits
ホーム >>> UTC >>> MJE13003BR データシート

MJE13003BR データシート - UTC

部品番号
コンポーネント説明
メーカー
MJE13003BR
UTC
Unisonic Technologies UTC
Other PDF
  not available.
PDF
DOWNLOAD     
MJE13003BR image

DESCRIPTION
These devices are designed for high-voltage, high-speed power switching inductive circuits where fall time is critical. They are particularly suited for 115 and 220V applications in switch mode.

FEATURES
* Reverse biased SOA with inductive load @ TC=100°C
* Inductive switching matrix0.5 ~ 1.5 Amp, 25 and 100°C
   Typical tC= 290ns @ 1A, 100°C.
* 700V blocking capability

APPLICATIONS
* Switching regulator’s, inverters
* Motor controls
* Solenoid/relay drivers
* Deflection circuits

 

部品番号
コンポーネント説明
PDF
メーカー
Silicon NPN Power Transistor
Inchange Semiconductor
Silicon NPN Power Transistor
Inchange Semiconductor
Silicon NPN Power Transistor
Inchange Semiconductor
Silicon NPN Power Transistor
Inchange Semiconductor
Silicon NPN Power Transistor
Inchange Semiconductor
Silicon NPN Power Transistor
Inchange Semiconductor
Silicon NPN Power Transistor
Inchange Semiconductor
Silicon NPN Power Transistor
Inchange Semiconductor
Silicon NPN Power Transistor
Inchange Semiconductor
Silicon NPN Power Transistor
Inchange Semiconductor

Share Link: 

All Rights Reserved© datasheetq.com  [ Privacy Policy ] [ Request Datasheet ] [ Contact Us ]