PZT2222AT1G データシートの表示（PDF） - ON Semiconductor

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PZT2222AT1G

NPN Silicon Planar Epitaxial Transistor

ON Semiconductor 

PZT2222A

ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)

Characteristic

OFF CHARACTERISTICS

Collector−Emitter Breakdown Voltage (IC = 10 mAdc, IB = 0)

Collector−Base Breakdown Voltage (IC = 10 mAdc, IE = 0)

Emitter−Base Breakdown Voltage (IE = 10 mAdc, IC = 0)

Base−Emitter Cutoff Current (VCE = 60 Vdc, VBE = − 3.0 Vdc)

Collector−Emitter Cutoff Current (VCE = 60 Vdc, VBE = − 3.0 Vdc)

Emitter−Base Cutoff Current (VEB = 3.0 Vdc, IC = 0)

Collector−Base Cutoff Current

(VCB = 60 Vdc, IE = 0)

(VCB = 60 Vdc, IE = 0, TA = 125°C)

ON CHARACTERISTICS

DC Current Gain

(IC = 0.1 mAdc, VCE = 10 Vdc)

(IC = 1.0 mAdc, VCE = 10 Vdc)

(IC = 10 mAdc, VCE = 10 Vdc)

(IC = 10 mAdc, VCE = 10 Vdc, TA = − 55°C)

(IC = 150 mAdc, VCE = 10 Vdc)

(IC = 150 mAdc, VCE = 1.0 Vdc)

(IC = 500 mAdc, VCE = 10 Vdc)

Collector−Emitter Saturation Voltages

(IC = 150 mAdc, IB = 15 mAdc)

(IC = 500 mAdc, IB = 50 mAdc)

Base−Emitter Saturation Voltages

(IC = 150 mAdc, IB = 15 mAdc)

(IC = 500 mAdc, IB = 50 mAdc)

Input Impedance°

(VCE = 10 Vdc, IC = 1.0 mAdc, f = 1.0 kHz)

(VCE = 10 Vdc, IC = 10 mAdc, f = 1.0 kHz)

Voltage Feedback Ratio

(VCE = 10 Vdc, IC = 1.0 mAdc, f = 1.0 kHz)

(VCE = 10 Vdc, IC = 10 mAdc, f = 1.0 kHz)

Small−Signal Current Gain

(VCE = 10 Vdc, IC = 1.0 mAdc, f = 1.0 kHz)

(VCE = 10 Vdc, IC = 10 mAdc, f = 1.0 kHz)

Output Admittance°

(VCE = 10 Vdc, IC = 1.0 mAdc, f = 1.0 kHz)

(VCE = 10 Vdc, IC = 10 mAdc, f = 1.0 kHz)

Noise Figure (VCE = 10 Vdc, IC = 100 mAdc, f = 1.0 kHz)

DYNAMIC CHARACTERISTICS

Current−Gain − Bandwidth Product

(IC = 20 mAdc, VCE = 20 Vdc, f = 100 MHz)

Output Capacitance (VCB = 10 Vdc, IE = 0, f = 1.0 MHz)

Input Capacitance (VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz)

SWITCHING TIMES (TA = 25°C)

Delay Time

Rise Time

(VCC = 30 Vdc, IC = 150 mAdc,

IB(on) = 15 mAdc, VEB(off) = 0.5 Vdc)

Figure 1

Storage Time

Fall Time

(VCC = 30 Vdc, IC = 150 mAdc,

IB(on) = IB(off) = 15 mAdc)

Figure 2

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2

Symbol

Min

Max

Unit

V(BR)CEO

V(BR)CBO

V(BR)EBO

IBEX

ICEX

IEBO

ICBO

40

°75°

6.0

−

−

−

−

−

−

Vdc

−

Vdc

−

Vdc

20

nAdc

10

nAdc

100

nAdc

10

nAdc

10

mAdc

hFE

VCE(sat)

VBE(sat)

°hie°

hre

ť hfe ť

°hoe°

F

−

35

−

50

−

70

−

35

−

100

300

50

−

40

−

Vdc

−

0.3

−

1.0

Vdc

0.6

1.2

−

2.0

kW

2.0

8.0

0.25

1.25

−

−

8.0x10−4

−

4.0x10−4

−

50

300

75

375

mmhos

5.0

35

25

200

−

4.0

dB

fT

MHz

300

−

Cc

−

8.0

pF

Ce

−

25

pF

td

−

10

ns

tr

−

25

ts

−

225

ns

tf

−

60

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