SEMICONDUCTOR
TECHNICAL DATA
HIGH CURRENT SWITCHING APPLICATION.
INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION.
FEATURES
ᴌWith Built-in Bias Resistors.
ᴌSimplify Circuit Design.
ᴌReduce a Quantity of Parts and Manufacturing Process.
ᴌHigh Output Current : 800mA.
EQUIVALENT CIRCUIT
OUT
R1
IN
R2
COMMON
TYPE NO.
KRC241M
KRC242M
KRC243M
KRC244M
KRC245M
KRC246M
R1(kή)
1
2.2
4.7
10
1
2.2
R2(kή)
1
2.2
4.7
10
10
10
KRC241M~KRC246M
EPITAXIAL PLANAR NPN TRANSISTOR
B
H
M
C
EE
1 2 3N
L
1. EMITTER
2. COLLECTOR
3. BASE
O DIM MILLIMETERS
A
3.20 MAX
B
4.30 MAX
C
0.55 MAX
D
2.40+_ 0.15
E
1.27
F
2.30
G
14.00+_ 0.50
H
0.60 MAX
J
1.05
K
1.45
L
25
M
0.80
N
0.55 MAX
O
0.75
TO-92M
MAXIMUM RATING (Ta=25ᴱ)
CHARACTERISTIC
Output Voltage
KRC241Mᴕ 246M
KRC241M
KRC242M
Input Voltage
KRC243M
KRC244M
KRC245M
KRC246M
Output Current
Power Dissipation
Junction Temperature
KRC241Mᴕ 246M
Storage Temperature Range
SYMBOL
VO
VI
IO
PD
Tj
Tstg
RATING
50
10, -10
12, -10
20, -10
30, -10
10, -5
12, -6
800
400
150
-55ᴕ150
UNIT
V
V
mA
mW
ᴱ
ᴱ
1996. 9. 9
Revision No : 1
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