MPSW45AZL1 データシートの表示（PDF） - ON Semiconductor
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MPSW45AZL1 Datasheet PDF : 6 Pages
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MPSW45, MPSW45A
MPSW45A is a Preferred Device
One Watt Darlington
Transistors
NPN Silicon
Features
• Pb−Free Packages are Available*
MAXIMUM RATINGS
Rating
Symbol Value
Unit
Collector −Emitter Voltage MPSW45
VCES
40
Vdc
MPSW45A
50
Collector −Base Voltage
MPSW45
VCBO
50
Vdc
MPSW45A
60
Emitter −Base Voltage
Collector Current − Continuous
Total Device Dissipation @ TA = 25°C
Derate above 25°C
VEBO
IC
PD
12
Vdc
1.0
Adc
1.0
W
8.0
mW/°C
Total Device Dissipation @ TC = 25°C
PD
2.5
W
Derate above 25°C
20
mW/°C
Operating and Storage Junction
Temperature Range
TJ, Tstg −55 to +150 °C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction−to−Ambient RqJA
125
°C/W
Thermal Resistance, Junction−to−Case
RqJC
50
°C/W
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
http://onsemi.com
BASE
2
COLLECTOR 3
EMITTER 1
TO−92 (TO−226)
CASE 29−10
1
STYLE 1
2
3
MARKING DIAGRAM
MPS
W45x
AYWW G
G
MPSW45x = Device Code
x = 45A Devices
A
= Assembly Location
Y
= Year
WW
= Work Week
G
= Pb−Free Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 5 of this data sheet.
Preferred devices are recommended choices for future use
and best overall value.
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
© Semiconductor Components Industries, LLC, 2006
1
February, 2006 − Rev. 3
Publication Order Number:
MPSW45/D
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