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MPSW45AZL1 データシートの表示(PDF) - ON Semiconductor

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MPSW45AZL1
ON-Semiconductor
ON Semiconductor ON-Semiconductor
MPSW45AZL1 Datasheet PDF : 6 Pages
1 2 3 4 5 6
MPSW45, MPSW45A
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
Collector −Emitter Breakdown Voltage
(IC = 100 mAdc, VBE = 0)
MPSW45
MPSW45A
Collector −Base Breakdown Voltage
(IC = 100 mAdc, IE = 0)
MPSW45
MPSW45A
Emitter −Base Breakdown Voltage
(IE = 10 mAdc, IC = 0)
Collector Cutoff Current
(VCB = 30 Vdc, IE = 0)
(VCB = 40 Vdc, IE = 0)
MPSW45
MPSW45A
Emitter Cutoff Current
(VEB = 10 Vdc, IC = 0)
ON CHARACTERISTICS (Note 1)
DC Current Gain
(IC = 200 mAdc, VCE = 5.0 Vdc)
(IC = 500 mAdc, VCE = 5.0 Vdc)
(IC = 1.0 Adc, VCE = 5.0 Vdc)
Collector −Emitter Saturation Voltage
(IC = 1.0 Adc, IB = 2.0 mAdc)
Base− Emitter Saturation Voltage
(IC = 1.0 Adc, IB = 2.0 mAdc)
Base −Emitter On Voltage
(IC = 1.0 Adc, VCE = 5.0 Vdc)
SMALL− SIGNAL CHARACTERISTICS
Current−Gain − Bandwidth Product
(IC = 200 mAdc, VCE = 5.0 Vdc, f = 100 MHz)
Collector−Base Capacitance
(VCB = 10 Vdc, IE = 0, f = 1.0 MHz)
1. Pulse Test: Pulse Width v 300 ms; Duty Cycle v 2.0%.
Symbol
V(BR)CES
V(BR)CBO
V(BR)EBO
ICBO
IEBO
hFE
VCE(sat)
VBE(sat)
VBE(on)
fT
Ccb
Min
Max
40
50
50
60
12
100
100
100
25,000
15,000
4,000
150,000
1.5
2.0
2.0
100
6.0
Unit
Vdc
Vdc
Vdc
nAdc
nAdc
Vdc
Vdc
Vdc
MHz
pF
RS
in
en
IDEAL
TRANSISTOR
Figure 1. Transistor Noise Model
http://onsemi.com
2

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