FDG316P データシートの表示（PDF） - Fairchild Semiconductor
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FDG316P Datasheet PDF : 5 Pages
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Typical Characteristics
10
8
6
4
2
0
0
VGS = -10V
-8.0V
-7.0V
-6V
-5.0V
-4.5V
-4.0V
-3.5V
-3.0V
-2.5V
1
2
3
4
5
-VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 1. On-Region Characteristics.
1.6
ID = -1.6A
1.4 VGS = -10V
1.2
1
0.8
0.6
-50 -25
0
25
50
75 100 125 150
TJ, JUNCTION TEMPERATURE (oC)
Figure 3. On-Resistance Variation
with Temperature.
10
VDS = -5V
8
TA = -55oC 25oC 125oC
6
4
2
0
0
2
4
6
8
-VGS, GATE TO SOURCE VOLTAGE (V)
Figure 5. Transfer Characteristics.
2
1.8
VGS = -4.0V
1.6
-4.5V
1.4
-5.0V
-6.0V
1.2
-7.0V
-8.0V -10V
1
0.8
0
2
4
6
8
10
-ID, DIRAIN CURRENT (A)
Figure 2. On-Resistance Variation
with Drain Current and Gate Voltage.
0.6
ID = -0.8A
0.5
0.4
0.3
TA = 125oC
0.2
TA = 25oC
0.1
0
2
4
6
8
10
-VGS, GATE TO SOURCE VOLTAGE (V)
Figure 4. On-Resistance Variation
with Gate-to-Source Voltage.
10
VGS = 0V
1
TA = 125oC
0.1
0.01
25oC
-55oC
0.001
0.0001
0
0.2 0.4 0.6 0.8
1
1.2 1.4 1.6
-VSD, BODY DIODE FORWARD VOLTAGE (V)
Figure 6. Body Diode Forward Voltage
Variation with Source Current
and Temperature.
FDG316P Rev. D
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