QSD124(2012) データシートの表示（PDF） - Fairchild Semiconductor

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QSD124
(Rev.:2012)

Plastic Silicon Infrared Phototransistor

Fairchild Semiconductor 

September 2012

QSD122, QSD123, QSD124

Plastic Silicon Infrared Phototransistor

Features

■ NPN Silicon Phototransistor

■ Package Type: T-1 3/4

■ Matched Emitter: QED12X/QED22X/QED23X

■ Narrow Reception Angle: 24°C

■ Daylight Filter

■ Package Material and Color: Black Epoxy

■ High Sensitivity

Description

The QSD122/123/124 is a phototransistor encapsulated

in an infrared transparent, black T-1 3/4 package.

Package Dimensions

0.195 (4.95)

REFERENCE

SURFACE

0.305 (7.75)

0.800 (20.3)

MIN

EMITTER

0.500 (1.25)

0.040 (1.02)

NOM

COLLECTOR

0.100 (2.54) NOM

Schematic

COLLECTOR

0.020 (0.51)

SQ. (2X)

0.240 (6.10)

0.215 (5.45)

Notes:

1. Dimensions for all drawings are in inches (mm).

2. Tolerance of ±0.010 (0.25) on all non-nominal dimensions unless otherwise specified.

EMITTER

©2012 Fairchild Semiconductor Corporation

QSD122, QSD123, QSD124 Rev. 1.0.0

www.fairchildsemi.com

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