A1706(1998) データシートの表示（PDF） - SANYO -> Panasonic

部品番号

コンポーネント説明

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A1706
(Rev.:1998)

PNP/NPN Epitaxial Planar Silicon Transistors

SANYO -> Panasonic 

Parameter

Collector-to-Emitter Saturation Voltage

Base-to-Emitter Saturation Voltage

Output Capacitance

Collector-to-Base Breakdown Voltage

Collector-to-Emitter Breakdown Voltage

Emitter-to-Base Breakdown Votage

Turn-ON TIme

Storage Time

Fall Time

Switching Time Test Circuit

2SA1706/2SC4486

Symbol

Conditions

VCE(sat) IC=(–)1A, IB=(–)50mA

VBE(sat)

Cob

V(BR)CBO

V(BR)CEO

V(BR)EBO

ton

tstg

IC=(–)1A, IB=(–)50mA

VCB=(–)10V, f=1MHz

IC=(–)10µA, IE=0

IC=(–)1mA, RBE=∞

IE=(–)10µA, IC=0

See specified Test Circuit

See specified Test Circuit

tf

See specified Test Circuit

Ratings

Unit

min

typ

max

(–0.3) (–0.7) V

0.15

0.4 V

(–)0.9 (–)1.2 V

(22)12

pF

(–)60

V

(–)50

V

(–)6

V

60

ns

(450)

ns

550

ns

30

ns

Unit (resistance : Ω, capacitance : F)

No.3026-2/5

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