SS8550B データシートの表示（PDF） - Fairchild Semiconductor

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SS8550B

PNP Epitaxial Silicon Transistor

Fairchild Semiconductor 

March 2008

SS8550

2W Output Amplifier of Portable Radios in Class B Push-pull Operation

Features

• Complimentary to SS8050

• Collector Current: IC=1.5A

• Collector Power Dissipation: PC=1W (TC=25×C)

1

TO-92

1. Emitter 2. Base 3. Collector

Absolute Maximum Ratings Ta=25×C unless otherwise noted

Symbol

VCBO

VCEO

VEBO

IC

PC

TJ

TSTG

Parameter

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Collector Current

Collector Power Dissipation

Junction Temperature

Storage Temperature

Ratings

-40

-25

-6

-1.5

1

150

-65 ~ 150

Units

V

V

V

A

W

°C

°C

Electrical Characteristics Ta=25×C unless otherwise noted

Symbol

Parameter

Test Condition

BVCBO

BVCEO

BVEBO

ICBO

IEBO

hFE1

hFE2

hFE3

VCE (sat)

VBE (sat)

VBE (on)

Cob

Collector-Base Breakdown Voltage

Collector-Emitter Breakdown Voltage

Emitter-Base Breakdown Voltage

Collector Cut-off Current

Emitter Cut-off Current

DC Current Gain

Collector-Emitter Saturation Voltage

Base-Emitter Saturation Voltage

Base-Emitter on Voltage

Output Capacitance

IC= -100μA, IE=0

IC= -2mA, IB=0

IE= -100μA, IC=0

VCB= -35V, IE=0

VEB= -6V, IC=0

VCE= -1V, IC= -5mA

VCE= -1V, IC= -100mA

VCE= -1V, IC= -800mA

IC= -800mA, IB= -80mA

IC= -800mA, IB= -80mA

VCE= -1V, IC= -10mA

VCB= -10V, IE=0

f=1MHz

fT

Current Gain Bandwidth Product

VCE= -10V, IC= -50mA

Min.

-40

-25

-6

45

85

40

100

Typ.

170

160

80

-0.28

-0.98

-0.66

15

200

Max.

-100

-100

300

-0.5

-1.2

-1.0

Units

V

V

V

nA

nA

V

V

V

pF

MHz

hFEClassification

Classification

hFE2

B

85 ~ 160

C

120 ~ 200

D

160 ~ 300

© 2007 Fairchild Semiconductor Corporation

SS8550 Rev. 1.0.0

1

www.fairchildsemi.com

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