KSA1013 データシートの表示（PDF） - Fairchild Semiconductor

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KSA1013

PNP Epitaxial Silicon Transistor

Fairchild Semiconductor 

Thermal Characteristics(1)

Values are at TA = 25°C unless otherwise noted.

Symbol

Parameter

Value

Unit

PD

RθJA

Power Dissipation

Derate Above TA = 25°C

Thermal Resistance, Junction to Ambient

900

mW

7.2

mW/°C

139

°C/W

Note:

1. PCB board size: FR-4 76 x 114 x 0.6T mm3(3.0 inch x 4.5 inch x 0.062 inch) with minimum land pattern size.

Electrical Characteristics

Values are at TA = 25°C unless otherwise noted.

Symbol

Parameter

ICBO

IEBO

BVCEO

hFE

VCE(sat)

VBE(on)

fT

Collector Cut-off Current

Emitter Cut-off Current

Collector-Emitter Breakdown Voltage

DC Current Gain

Collector-Emitter Saturation Voltage

Base-Emitter On Voltage

Current Gain Bandwidth Product

Cob

Output Capacitance

Test Condition

VCB = -150 V, IE = 0

VEB = -6 V, IC = 0

IC = -10 mA, IB = 0

VCE = -5 V, IC = -200 mA

IC = -500 mA, IB = -50 mA

VCE = -5 V, IC = -5 mA

VCE = -5 V, IC = -200 mA

VCB = -10 V, IE = 0,

f = 1 MHz

Min.

-160

60

-0.45

15

Typ.

50

Max.

-1

-1

320

-1.5

-0.75

Units

μA

μA

V

V

V

MHz

35

pF

hFE Classification

Classification

hFE

R

60 ~ 120

O

100 ~ 200

Y

160 ~ 320

© 2002 Fairchild Semiconductor Corporation

KSA1013 Rev. 1.1.0

2

www.fairchildsemi.com

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