KSA1013 データシートの表示（PDF） - Fairchild Semiconductor

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KSA1013

PNP Epitaxial Silicon Transistor

Fairchild Semiconductor 

Typical Performance Characteristics

-1.0

EMITTER COMMON

-0.9 Ta=25oC

IB = -15mA

IB = -12mA

-0.8

IB = -10mA

-0.7

IB = -8mA

-0.6

-0.5

IB = -6mA

-0.4

IB = -4.5mA

-0.3

IB = -3mA

-0.2

IB = -2mA

-0.1

IB = -1mA

-0.0

-0 -2 -4 -6 -8 -10 -12 -14 -16 -18 -20

VCE[V], COLLECTOR-EMITTER VOLTAGE

Figure 1. Static Characteristic

1000

EMITTER COMMON

-----VCE=-10V

- - -VCE= -5V

100

10

-10

-100

-1000

IC[mA], COLLECTOR CURRENT

Figure 3. DC Current Gain

-1.0

EMITTER COMMON

VCE=-5V

-0.8

-0.6

-0.4

-0.2

-0.0

-0.0 -0.1 -0.2 -0.3 -0.4 -0.5 -0.6 -0.7 -0.8 -0.9 -1.0

VBE(sat)[V], BASE-EMITTER VOLTAGE

Figure 5. Base-Emitter On Voltage

1000

100

10

EMITTER COMMON

Ta=25oC

VCE = -10V

VCE = -5V

VCE = -2V

1

-10

-100

-1000

IC[mA], COLLECTOR CURRENT

Figure 2. DC Current Gain

-10

EMITTER COMMON

Ta=25oC

-1

-0.1

IC/IB=10

IC/IB=5

-0.01

-1

-10

-100

-1000

IC[mA], COLLECTOR CURRENT

Figure 4. Collector-Emitter Saturation Voltage

100

10

1

-10

-100

VCB[V], COLLECTOR-BASE VOLTAGE

Figure 6. Collector Output Capacitance

© 2002 Fairchild Semiconductor Corporation

KSA1013 Rev. 1.1.0

3

www.fairchildsemi.com

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