HS-1145RH データシートの表示（PDF） - Intersil
部品番号
コンポーネント説明
メーカー
HS-1145RH Datasheet PDF : 9 Pages
| |||
Die Characteristics
DIE DIMENSIONS:
59 mils x 59 mils x 14 mils ±1 mil
(1500µm x 1500µm x 483µm ± 25.4µm)
INTERFACE MATERIALS:
Glassivation:
Type: Nitride
Thickness: 4kÅ ±0.5kÅ
Top Metallization:
Type: Metal 1: AICu(2%)/TiW
Thickness: Metal 1: 8kÅ ±0.4kÅ
Type: Metal 2: AICu(2%)
Thickness: Metal 2: 16kÅ ±0.8kÅ
Metallization Mask Layout
HS-1145RH
Substrate:
UHF-1, Bonded Wafer, DI
ASSEMBLY RELATED INFORMATION:
Substrate Potential:
Floating (Recommend Connection to V-)
ADDITIONAL INFORMATION:
Transistor Count:
75
HS-1145RH
-IN
DISABLE
V+
OUT
+IN
V-
OPTIONAL GND (NOTE)
NOTE: This pad is not bonded out on packaged units. Die users may set a GND reference, via this pad, to ensure the TTL compatibility of the DIS
input when using asymmetrical supplies (e.g. V+ = 10V, V- = 0V). See the “Application Information” section for details.
All Intersil U.S. products are manufactured, assembled and tested utilizing ISO9000 quality systems.
Intersil Corporation’s quality certifications can be viewed at www.intersil.com/design/quality
Intersil products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design, software and/or specifications at any time without
notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate and
reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result
from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries.
For information regarding Intersil Corporation and its products, see www.intersil.com
9
FN4227.2
February 14, 2005
Share Link: 